ElecSuper AO4407C ES P Channel MOSFET Featuring High Density Cell Structure and Low RDS ON for Power
Key Attributes
Model Number:
AO4407C(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
9.5mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.78nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
AO4407C(ES)
Package:
SOP-8
Product Description
AO4407C(ES) - SuperMOS P-channel MOSFET
The AO4407C(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is designed for high-density cell structures, ensuring low RDS(on) and providing reliable, rugged performance with avalanche rating and low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -12 | A | ||
| TA=100°C | -10 | A | ||||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| TA=100°C | 2.0 | |||||
| Pulsed Drain Current | IDM | -60 | A | |||
| Avalanche Current, Single Pulsed | IAS | -22 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 72 | mJ | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1 | -1.5 | -2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 9.5 | 13 | mΩ | |
| VGS=-4.5V, ID=-7A | 14 | 17 | ||||
| Forward Transconductance | gFS | VDS=-5.0V, ID=-10A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =-15V | 235 | |||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =-15V | 200 | |||
| Gate Resistance | Rg | f=1MHz | 6.0 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-15A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-15A | 1.0 | |||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-15A | 1.4 | |||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 27 | |||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 68 | |||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 39 | |||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1 | V | |
2504101957_ElecSuper-AO4407C-ES_C42412318.pdf
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