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quality Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications factory
quality Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications factory

Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is a high-reliability NPN switching transistor designed for various electronic applications. It features a high collector-base voltage of 180V and a continuous collector current of 600mA, with a power dissipation of 300mW. This transistor is complementary to the MMBT5401 and offers high stability. It is housed in a compact SOT-23 small outline plastic package, suitable for any mounting position. Ideal for switching applications requiring robust performance and reliability.

Product Attributes

  • Brand: ElecSuper
  • Model: MMBT5551
  • Package Type: SOT-23 Small Outline Plastic Package
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Complementary To: MMBT5401

Technical Specifications

Parameters Symbol Value Unit Test Condition
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55~150
Thermal Resistance (Junction to Ambient) RJA 416 /W
Collector-base breakdown voltage V(BR)CBO 180 V IC=100uA, IE=0
Collector-emitter breakdown voltage V(BR)CEO* 160 V IC=1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10uA, IC=0
Collector cut-off current ICBO 50 nA VCB=120V, IE=0
Emitter cut-off current IEBO 50 nA VEB=4V, IC=0
DC current gain (hFE1) hFE1* 80 VCE=5V, IC=1mA
DC current gain (hFE2) hFE2* 100~300 VCE=5V, IC=10mA
DC current gain (hFE3) hFE3* 30 VCE=5V, IC=50mA
Collector-emitter saturation voltage VCE(sat) * 0.15 V IC=10mA, IB=1mA
Collector-emitter saturation voltage VCE(sat) * 0.20 V IC=50mA, IB=5mA
Base-emitter saturation voltage VBE(sat) * 1.00 V IC=10mA, IB=1mA
Base-emitter saturation voltage VBE(sat) * 1.00 V IC=50mA, IB=5mA
Transition frequency fT 100~300 MHz VCE=10V, IC=10mA, f=100MHz
Collector output capacitance COB 6 pF VCB=10V, IE=0, f=1MHz

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8

Note:
1. Controlling dimension: in millimeters
2. General tolerance: 0.05mm
3. The pad layout is for reference only
4. Unit: mm


2410121717_ElecSuper-MMBT5551_C5249687.pdf

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