Schottky Barrier Rectifier Diode DOWO 1N5822 3A 40V Metal Silicon Junction RoHS Compliant
Key Attributes
Model Number:
1N5822
Product Custom Attributes
Reverse Leakage Current (Ir):
300uA@40V
Non-Repetitive Peak Forward Surge Current:
80A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - Forward(Vf@If):
550mV@10A
Current - Rectified:
3A
Mfr. Part #:
1N5822
Package:
DO-201AD
Product Description
Product Overview
The 1N5820-1N5822 series are 3A, 20V - 40V Schottky Barrier Rectifier Diodes. Featuring metal silicon junctions and majority carrier conduction, these diodes offer low power loss and high efficiency, with excellent forward surge current capability. They are designed for high-temperature soldering and comply with RoHS standards.
Product Attributes
- Brand: DOWOSEMI
- Origin: China (implied by URL)
- Material: Metal Silicon Junction
- Certifications: RoHS standard
Technical Specifications
| Parameter | SYMBOLS | 1N5820 | 1N5821 | 1N5822 | UNITS |
| Maximum repetitive peak reverse voltage | VRMM | 20 | 30 | 40 | V |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | V |
| Maximum DC blocking voltage | VDC | 20 | 30 | 40 | V |
| Maximum average forward rectified current (0.375 lead length) | I(AV) | 3.0 | A | ||
| Peak forward surge current (8.3ms single half sine-wave) | IFSM | 80.0 | A | ||
| Maximum instantaneous forward voltage at 10.0A (TA=25) | VF | 0.50 | 0.55 | V | |
| Maximum DC reverse current at rated DC blocking voltage (TA=25) | IR | 0.3 | mA | ||
| Maximum DC reverse current at rated DC blocking voltage (TA=100) | IR | 15.0 | mA | ||
| Typical junction capacitance | CJ | 150 | pF | ||
| Typical thermal resistance | RJA | 40.0 | /W | ||
| Operating junction and storage temperature range | TJ | -65 to +125 | |||
| Storage temperature range | TSTG | -65 to +125 | |||
2410122027_DOWO-1N5822_C27636119.pdf
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