power management ElecSuper IPB042N10N3G ES N Channel MOSFET with low RDS ON and high current rating
Key Attributes
Model Number:
IPB042N10N3G(ES)
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
1.002nF
Input Capacitance(Ciss):
6.862nF
Pd - Power Dissipation:
179W
Gate Charge(Qg):
118nC@10V
Mfr. Part #:
IPB042N10N3G(ES)
Package:
TO-263
Product Description
Product Overview
The IPB042N10N3G(ES) is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and designed for high density cell applications, providing reliability and ruggedness.
Product Attributes
- Brand: ElecSuper
- Part Number: IPB042N10N3G(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 85 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 120 | A | ||
| Continuous Drain Current | ID | TC=100°C | 100 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 179 | W | ||
| Maximum Power Dissipation | PD | TC=100°C | 71 | W | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 0.7 | °C/W | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 65 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 85 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=85V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.2 | 3.8 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=50A | 3.1 | 3.6 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=50A | 90 | S | ||
| Input Capacitance | CISS | VGS=0V, f=250KHz, VDS=42.5V | 6862 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=250KHz, VDS=42.5V | 1002 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=250KHz, VDS=42.5V | 26 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=68V, ID=50A | 118 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=68V, ID=50A | 33 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=68V, ID=50A | 35 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=42.5V, ID=50A | 45 | ns | ||
| Rise Time | tr | VGS=10V, VDS=42.5V, ID=50A | 114 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=42.5V, ID=50A | 340 | ns | ||
| Fall Time | tf | VGS=10V, VDS=42.5V, ID=50A | 61 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=50A | 0.45 | 1.5 | V | |
2506121200_ElecSuper-IPB042N10N3G-ES_C49108761.pdf
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