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quality Compact P channel MOSFET ElecSuper ESJ3139KDW designed for power switching and charging applications factory
quality Compact P channel MOSFET ElecSuper ESJ3139KDW designed for power switching and charging applications factory

Compact P channel MOSFET ElecSuper ESJ3139KDW designed for power switching and charging applications

Key Attributes
Model Number: ESJ3139KDW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
610mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF@10V
Input Capacitance(Ciss):
71pF@10V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
ESJ3139KDW
Package:
SOT-323
Product Description

SuperMOS SOT-323 P-channel MOSFET

The ESJ3139KDW is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. Its high-density cell design contributes to low RDS(on), and it is designed to be reliable and rugged with avalanche rating and low leakage current.

Product Attributes

  • Brand: ElecSuper
  • Model: ESJ3139KDW
  • Package: SOT-323
  • Material: Halogen free, Pb-free
  • Certifications: UL 94V-0
  • Origin: Copyright ElecSuper Incorporated

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source Voltage BVDSS -20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID TA=25°C -0.5 A
Continuous Drain Current ID TA=75°C -0.4 A
Maximum Power Dissipation PD 0.15 W
Pulsed Drain Current IDM -2.6 A
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 150 °C
Junction-to-Ambient Thermal Resistance RθJA Single Operation 833 °C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 V
Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA
Gate-to-source Leakage Current IGSS VDS=0V, VGS=±10V ±10 uA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=-250uA -0.35 -0.62 -1.2 V
Drain-to-source On-resistance RDS(on) VGS=-4.5V, ID=-0.5A 610 850 mΩ
Drain-to-source On-resistance RDS(on) VGS=-2.5V, ID=-0.3A 885 1200 mΩ
Drain-to-source On-resistance RDS(on) VGS=-1.8V, ID=-0.2A 1380 2000 mΩ
Input Capacitance CISS VGS=0V, f=1MHz, VDS=-10V 71 pF
Output Capacitance COSS VGS=0V, f=1MHz, VDS=-10V 20 pF
Reverse Transfer Capacitance CRSS VGS=0V, f=1MHz, VDS=-10V 15 pF
Total Gate Charge QG(TOT) VGS=-4.5V, VDS=-10V, ID=-0.5A 1.25 nC
Gate-to-Source Charge QGS VGS=-4.5V, VDS=-10V, ID=-0.5A 0.38
Gate-to-Drain Charge QGD VGS=-4.5V, VDS=-10V, ID=-0.5A 0.28
Turn-On Delay Time td(ON) VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω 4 ns
Rise Time tr VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω 19 ns
Turn-Off Delay Time td(OFF) VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω 16 ns
Fall Time tf VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω 25 ns
Forward Voltage VSD VGS=0V, IS=-0.5A -1.5 V

2504101957_ElecSuper-ESJ3139KDW_C42420842.pdf

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