Low Gate Charge and Excellent RDS ON in ElecSuper ESDNJ03R4 N Channel MOSFET for Power Applications
Key Attributes
Model Number:
ESDNJ03R4
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
41A
RDS(on):
5mΩ@10V;6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF
Output Capacitance(Coss):
275pF
Pd - Power Dissipation:
20.8W
Input Capacitance(Ciss):
1.983nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
ESDNJ03R4
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The ESDNJ03R4 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and ruggedness.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Model: ESDNJ03R4
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- RoHS Compliance: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.7 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 5.0 | 6.5 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 6.5 | 8.5 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 100 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1983 | pF | ||
| Output Capacitance | COSS | 275 | pF | |||
| Reverse Transfer Capacitance | CRSS | 242 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=20A | 48 | nC | ||
| Gate-to-Source Charge | QGS | 4.8 | nC | |||
| Gate-to-Drain Charge | QGD | 12 | nC | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=0.75, RG=1.8 | 8.5 | ns | ||
| Rise Time | tr | 9 | ns | |||
| Turn-Off Delay Time | td(OFF) | 32 | ns | |||
| Fall Time | tf | 11 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=20A | 0.75 | 1.5 | V | |
| ABSOLUTE MAXIMUM RATINGS & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 41 | A | ||
| Continuous Drain Current | ID | TC=75C | 32 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 20.8 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 12.5 | W | ||
| Pulsed Drain Current | IDM | 164 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 30 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 135 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 20 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 6 | ESD | ||
2504101957_ElecSuper-ESDNJ03R4_C42412251.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
