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quality N Channel MOSFET ElecSuper IRLR024NTRPBF ES ideal for power switch and DC DC conversion applications factory
quality N Channel MOSFET ElecSuper IRLR024NTRPBF ES ideal for power switch and DC DC conversion applications factory

N Channel MOSFET ElecSuper IRLR024NTRPBF ES ideal for power switch and DC DC conversion applications

Key Attributes
Model Number: IRLR024NTRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
26mΩ@10V;33mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
IRLR024NTRPBF-ES
Package:
TO-252
Product Description

Product Overview

The IRLR024NTRPBF-ES is an N-Channel enhancement mode MOS Field Effect Transistor from ElecSuper, utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, and avalanche rating. This standard product is Pb-free and Halogen-free.

Product Attributes

  • Brand: ElecSuper
  • Origin: Not specified
  • Material: Halogen free
  • Color: Not specified
  • Certifications: UL 94V-0

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageBVDSS---60V
Gate-Source VoltageVGS--±20-V
Continuous Drain CurrentIDTC=25C--20A
Continuous Drain CurrentIDTC=75C--16A
Maximum Power DissipationPD---25W
Pulsed Drain CurrentIDM---80A
Avalanche Current, Single PulsedIASa--16A
Avalanche Energy, Single PulsedEASa--16mJ
Operating Junction TemperatureTJ---150°C
Lead TemperatureTL---260°C
Storage Temperature RangeTstg--55-150°C
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA60--V
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS=0V--1.0uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±20V--±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA1.01.62.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=20A-2633mΩ
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=10A-3345mΩ
Forward TransconductancegFSVDS=5.0V, ID=20A-40-S
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V-860-pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=25V-62-pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=25V-51-pF
Total Gate ChargeQG(TOT)VGS=10V, VDS=30V, ID=10A-20.3-nC
Gate-to-Source ChargeQGSVGS=10V, VDS=30V, ID=10A-3.8-nC
Gate-to-Drain ChargeQGDVGS=10V, VDS=30V, ID=10A-5.5-nC
Turn-On Delay Timetd(ON)VGS=10V, VDS=30V, ID=5A, RG=1.8Ω-6-ns
Rise TimetrVGS=10V, VDS=30V, ID=5A, RG=1.8Ω-6-ns
Turn-Off Delay Timetd(OFF)VGS=10V, VDS=30V, ID=5A, RG=1.8Ω-19-ns
Fall TimetfVGS=10V, VDS=30V, ID=5A, RG=1.8Ω-3-ns
Forward VoltageVSDVGS=0V, IS=10A-0.71.5V

2504101957_ElecSuper-IRLR024NTRPBF-ES_C22379636.pdf

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