switching MOSFET ElecSuper IRLR3410TRPBF ES with low RDS ON and halogen free material construction
Key Attributes
Model Number:
IRLR3410TRPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
80mΩ@10V;90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
46W
Input Capacitance(Ciss):
1.085nF
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
IRLR3410TRPBF(ES)
Package:
TO-252
Product Description
Product Overview
The IRLR3410TRPBF(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), halogen-free material, and is avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: IRLR3410TRPBF(ES)
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
- Packaging: Tape & Reel
- Quantity per Tube: 2,500 PCS
- Reel Size: 13 inches
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 15 | A | ||
| TC=75C | 9 | A | ||||
| Maximum Power Dissipation | PD | 46 | W | |||
| Pulsed Drain Current | IDM | 60 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.8 | 2.4 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | 80 | 100 | mΩ | |
| VGS=4.5V, ID=8A | 90 | 115 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1085 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 52 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 42 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=50V, ID=10A | 22 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=50V, ID=10A | 3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=50V, ID=10A | 6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=50V, ID=10A, RG=3Ω | 14 | ns | ||
| Rise Time | tr | VGS=10V, VDS=50V, ID=10A, RG=3Ω | 5.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=50V, ID=10A, RG=3Ω | 28 | ns | ||
| Fall Time | tf | VGS=10V, VDS=50V, ID=10A, RG=3Ω | 5.3 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=10A | 1.5 | V | ||
2504101957_ElecSuper-IRLR3410TRPBF-ES_C42412310.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
