Low gate charge P Channel MOSFET ElecSuper BSS84AKS115ES ideal for power switch and DC DC conversion

Key Attributes
Model Number: BSS84AKS,115(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
230mW
Input Capacitance(Ciss):
17pF
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS84AKS,115(ES)
Package:
SOT-363
Product Description

Product Overview

The BSS84AKS,115(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and avalanche rating.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-60V
Zero Gate Voltage Drain CurrentIDSSVGS=0V, VDS=-60V-100nA
Gate-to-source Leakage CurrentIGSSVGS=20V, VDS=0V10uA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-1.1-1.6-2.2V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-0.15A3.55.2
VGS=-4.5V, ID=-0.1A4.56.3
Input CapacitanceCISSVGS=0V, VDS =-25V f=1MHz17pF
Output CapacitanceCOSS
Reverse Transfer CapacitanceCRSS1.6
Total Gate ChargeQG(TOT)VGS=-10V, VDS=-25V ID=-0.15A1.1nC
Gate-to-Source ChargeQGS0.3
Gate-to-Drain ChargeQGD0.2
Turn-On Delay Timetd(ON)VGS=-10V, VDS=-25V ID=-0.15A, RG=64.8ns
Rise Timetr19
Turn-Off Delay Timetd(OFF)52
Fall Timetf32
Forward VoltageVSDVGS=0V, ISD=-0.15A-0.45-0.88-1.5V

2412230931_ElecSuper-BSS84AKS-115-ES_C42379945.pdf

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