Low gate charge P Channel MOSFET ElecSuper BSS84AKS115ES ideal for power switch and DC DC conversion
Product Overview
The BSS84AKS,115(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-0.15A | 3.5 | 5.2 | ||
| VGS=-4.5V, ID=-0.1A | 4.5 | 6.3 | ||||
| Input Capacitance | CISS | VGS=0V, VDS =-25V f=1MHz | 17 | pF | ||
| Output Capacitance | COSS | |||||
| Reverse Transfer Capacitance | CRSS | 1.6 | ||||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-25V ID=-0.15A | 1.1 | nC | ||
| Gate-to-Source Charge | QGS | 0.3 | ||||
| Gate-to-Drain Charge | QGD | 0.2 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-25V ID=-0.15A, RG=6 | 4.8 | ns | ||
| Rise Time | tr | 19 | ||||
| Turn-Off Delay Time | td(OFF) | 52 | ||||
| Fall Time | tf | 32 | ||||
| Forward Voltage | VSD | VGS=0V, ISD=-0.15A | -0.45 | -0.88 | -1.5 | V |
2412230931_ElecSuper-BSS84AKS-115-ES_C42379945.pdf
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