ElecSuper AP2300 ES N Channel MOSFET Featuring Low RDS ON and Halogen Free Material for Power Switch
Key Attributes
Model Number:
AP2300-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
25mΩ@4.5V;29mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
470pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
AP2300-ES
Package:
SOT-23
Product Description
Product Overview
The AP2300-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: SuperMOS
- Part Number: AP2300-ES
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25℃ | 4 | A | ||
| Continuous Drain Current | ID | TA=100℃ | 3 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Lead Temperature | TL | 260 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| Junction-to-Ambient Thermal Resistance | RΘJA | Single Operation | 106 | ℃/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.75 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=4A | 25 | 32 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=3A | 29 | 38 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 470 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 55 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 50 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=2A | 6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=2A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=2A | 1.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 4 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 13 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 65 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 33 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=4A | 1.5 | V | ||
2504101957_ElecSuper-AP2300-ES_C5224178.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
