Durable ElecSuper ESE40P40K P Channel Enhancement MOSFET with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
ESE40P40K
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
45A
RDS(on):
13mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
180pF@15V
Input Capacitance(Ciss):
2.5nF@15V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
ESE40P40K
Package:
TO-252
Product Description
Product Overview
The ESE40P40K is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: ESE40P40K
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC=25C | -45 | A | ||
| Continuous Drain Current | ID | TC=75C | -34 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 52 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 32 | W | ||
| Pulsed Drain Current | IDM | a | -180 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | -33 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 163 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t ≤ 10 s | 15 | 20 | °C/W | |
| Junction-to-Case Thermal Resistance | RJC | Steady State | 2 | 2.4 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-40V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.6 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 13 | 16 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-15A | 17 | 20 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 2500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 260 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 180 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-20A | 42 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-20A | 7 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-20A | 8.8 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 10 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 55 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 30 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-ESE40P40K_C42420755.pdf
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