High Reliability ElecSuper Si2302CDS T1 GE3 ES MOSFET with Low RDS ON and Halogen Free Construction
Key Attributes
Model Number:
Si2302CDS-T1-GE3-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V;62mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
Si2302CDS-T1-GE3-ES
Package:
SOT-23
Product Description
Product Overview
The SI2302CDS-T1-GE3-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), material that is Halogen free, and is reliable, rugged, ESD protected, and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25 | 3.3 | A | ||
| Continuous Drain Current | ID | TA=100 | 2.1 | A | ||
| Maximum Power Dissipation | PD | 0.9 | mW | |||
| Pulsed Drain Current | IDM | 13.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 138 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.7 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | 45 | 55 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=2A | 62 | 85 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 200 | pF | ||
| Output Capacitance | COSS | 35 | pF | |||
| Reverse Transfer Capacitance | CRSS | 28 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=2A | 3 | nC | ||
| Gate-to-Source Charge | QGS | 0.5 | ||||
| Gate-to-Drain Charge | QGD | 0.7 | ||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ns | ||
| Rise Time | tr | 11 | ||||
| Turn-Off Delay Time | td(OFF) | 20 | ||||
| Fall Time | tf | 8 | ||||
| Forward Voltage | VSD | VGS=0V, IS=3A | 1.5 | V | ||
2504101957_ElecSuper-Si2302CDS-T1-GE3-ES_C5224182.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
