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quality NPN Transistor ElecSuper PXT8050 Featuring SOT89 3L Package and 500mW Power Dissipation Capability factory
quality NPN Transistor ElecSuper PXT8050 Featuring SOT89 3L Package and 500mW Power Dissipation Capability factory

NPN Transistor ElecSuper PXT8050 Featuring SOT89 3L Package and 500mW Power Dissipation Capability

Key Attributes
Model Number: PXT8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
PXT8050
Package:
SOT-89-3L
Product Description

Product Overview

The PXT8050 is a high-stability, high-reliability NPN transistor designed for various electronic applications. Featuring a VCBO of 40V and an IC of 1500mA, this transistor is encapsulated in a SOT-89-3L small outline plastic package. It offers a power dissipation of 500mW, making it suitable for applications requiring efficient power handling. The PXT8050 is designed for mounting in any position.

Product Attributes

  • Brand: ElecSuper
  • Model: PXT8050
  • Package Type: SOT-89-3L
  • Encapsulation: Plastic-Encapsulate
  • Material: Epoxy UL: 94V-0

Technical Specifications

Parameter Symbol Test Condition Value Unit
Absolute Maximum Ratings & Thermal Characteristics
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 1500 mA
Collector Power Dissipation PC 500 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55~150
Thermal Resistance (Junction to Ambient) RJA 250 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 5 V
Collector cut-off current ICEO VCE=20V, IB=0 100 nA
ICBO VCB=40V, IE=0 100 nA
IEBO VEB=5V, IC=0 100 nA
DC current gain hFE(1) VCE=1V, IC=100mA 85-400
hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.50 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.20 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1.0 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V, IC=50mA, f=30MHz 100 MHz
Output capacitance Cob VCB=10V, IE=0, f=1MHz 15 pF

hFE Classification

Rank Range
B 85~160
C 120~200
D 160~300
D3 300~400

Dimensions and Patterns (SOT-89-3L)

Symbol Dimensions (mm) Symbol Dimensions (mm)
Min. Max. Min. Max.
1.40 1.60 D1 1.55REF
0.32 0.52 E 2.30 2.60
0.40 0.58 E1 3.94 4.25
0.35 0.44 e 1.50TYP
4.40 4.60 L 0.90 1.20
A
b
b1
c
D

Note: Controlling dimension: in millimeters. General tolerance: 0.05mm. The pad layout is for reference only. Unit: m.


2410121717_ElecSuper-PXT8050_C5334066.pdf

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