Low Gate Charge N Channel MOSFET ElecSuper ES5N10 Suitable for Charging Circuits and DC DC Conversion

Key Attributes
Model Number: ES5N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V;120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
206pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
ES5N10
Package:
SOT-23
Product Description

Product Overview

The ES5N10 is an N-Channel enhancement mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA100V
Zero Gate Voltage Drain CurrentIDSSVDS=100V, VGS=0V1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=20V100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA1.01.652.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=2.5A90135m
VGS=4.5V, ID=2A120195m
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V206pF
Output CapacitanceCOSS29pF
Reverse Transfer CapacitanceCRSS1.4pF
Total Gate ChargeQG(TOT)VGS=10V, VDS=25V, ID=2.5A4.2nC
Gate-to-Source ChargeQGS1.5nC
Gate-to-Drain ChargeQGD1.1nC
Turn-On Delay Timetd(ON)VGS=10V, VDS=25V, ID=2.5A, RG=214.7ns
Rise Timetr3.5ns
Turn-Off Delay Timetd(OFF)20.9ns
Fall Timetf2.7ns
Forward VoltageVSDVGS=0V, IS=1.0A0.81.5V

2504101957_ElecSuper-ES5N10_C5224313.pdf

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