Power switch N Channel MOSFET ElecSuper ESN4486 offering trench technology and halogen free material
Key Attributes
Model Number:
ESN4486
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
82mΩ@10V;90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
815pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
ESN4486
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN4486 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, a reliable and rugged construction, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Product Type: Standard Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typical | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.8 | 3.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=4A | 82 | 122 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | 90 | 142 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=4A | 40 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 815 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 50 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 35 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=50V, ID=2A | 12 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=50V, ID=2A | 2.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=50V, ID=2A | 2.8 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=50V, RL=1, RG=3 | 7 | ns | ||
| Rise Time | tr | VGS=10V, VDS=50V, RL=1, RG=3 | 5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=50V, RL=1, RG=3 | 18 | ns | ||
| Fall Time | tf | VGS=10V, VDS=50V, RL=1, RG=3 | 8 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=1A | 0.7 | 1.2 | V | |
| ABSOLUTE MAXIMUM RATING & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 10 | A | ||
| Continuous Drain Current | ID | TC=75C | 8 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 20 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 12 | W | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Avalanche Current, Single Pulsed | IAS | 12.5 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 23.4 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 110 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 6.3 | C/W | ||
2504101957_ElecSuper-ESN4486_C5224310.pdf
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