ElecSuper IRLR7843TRPBF ES N Channel MOSFET Ideal for Power Switch and DC DC Conversion Applications
Key Attributes
Model Number:
IRLR7843TRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
330pF
Number:
1 N-channel
Output Capacitance(Coss):
390pF
Input Capacitance(Ciss):
2.68nF
Pd - Power Dissipation:
58W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
IRLR7843TRPBF-ES
Package:
TO-252
Product Description
Product Overview
The IRLR7843TRPBF-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | Typical | Maximum |
| Drain-Source Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | ||
| Gate-Source Voltage | VGS | V | 20 | |||
| Continuous Drain Current | ID | 95 | A | TC=25C | ||
| Continuous Drain Current | ID | 74 | A | TC=75C | ||
| Maximum Power Dissipation | PD | 58 | W | TC=25C | ||
| Maximum Power Dissipation | PD | 35 | W | TC=75C | ||
| Pulsed Drain Current | IDM | 380 | A | |||
| Avalanche Current single pulse | IAS | 22 | A | EAS condition : TJ=25, VDD=20V, VG=10V, L=0.5mH, Rg=25. | ||
| Avalanche Energy single pulse | EAS | 121 | mJ | EAS condition : TJ=25, VDD=20V, VG=10V, L=0.5mH, Rg=25. | ||
| Operating Junction Temperature | TJ | C | 150 | |||
| Lead Temperature | TL | C | 260 | |||
| Storage Temperature Range | Tstg | C | -55 | 150 | ||
| Junction-to-Case Thermal Resistance | RJC | C/W | Single Operation | 2.14 | ||
| Gate Threshold Voltage | VGS(TH) | V | VGS=VDS, ID=250uA | 1.0 | 1.5, 2.5 | |
| Drain-to-source On-resistance | RDS(on) | m | VGS=10V, ID=30A | 2.9 | 4.0 | |
| Drain-to-source On-resistance | RDS(on) | m | VGS=4.5V, ID=20A | 4.8 | 6.5 | |
| Input Capacitance | CISS | pF | VGS=0V, f=1MHz, VDS=15V | 2680 | ||
| Output Capacitance | COSS | pF | VGS=0V, f=1MHz, VDS=15V | 390 | ||
| Reverse Transfer Capacitance | CRSS | pF | VGS=0V, f=1MHz, VDS=15V | 330 | ||
| Total Gate Charge | QG(TOT) | nC | VGS=10V, VDD=15V, ID=30A | 30 | ||
| Gate-to-Source Charge | QGS | nC | VGS=10V, VDD=15V, ID=30A | 7.2 | ||
| Gate-to-Drain Charge | QGD | nC | VGS=10V, VDD=15V, ID=30A | 10.5 | ||
| Turn-On Delay Time | td(ON) | ns | VGS=10V, VDD=15V, ID=30A, RG=3 | 23 | ||
| Rise Time | tr | ns | VGS=10V, VDD=15V, ID=30A, RG=3 | 28 | ||
| Turn-Off Delay Time | td(OFF) | ns | VGS=10V, VDD=15V, ID=30A, RG=3 | 75 | ||
| Fall Time | tf | ns | VGS=10V, VDD=15V, ID=30A, RG=3 | 35 | ||
| Forward Voltage | VSD | V | VGS=0V, IS=30A | 1.5 |
2504101957_ElecSuper-IRLR7843TRPBF-ES_C41365327.pdf
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