High Density Cell Design P Channel MOSFET ElecSuper SI2307A ES with Low Gate Charge and Rugged Build
Key Attributes
Model Number:
SI2307A-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@10V;49mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
54pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
SI2307A-ES
Package:
SOT-23
Product Description
Product Overview
The SI2307A-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.9 | A | ||
| Continuous Drain Current | ID | TA=100°C | -2.4 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.5 | W | ||
| Pulsed Drain Current | IDM | a | -15.6 | A | ||
| Junction-to-Ambient Thermal Resistance | RθJA | b | 83 | °C/W | ||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.9 | -1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3.9A c | 42 | 58 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.5A c | 49 | 65 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-2.5A c | 72 | 90 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 510 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 54 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 47 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to -4.5V VDS=-15V, ID =-3A | 6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -4.5V VDS=-15V, ID =-3A | 1.4 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to -4.5V VDS=-15V, ID =-3A | 2 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-15V ID=-3A, RG=3Ω | 10 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-15V ID=-3A, RG=3Ω | 80 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-15V ID=-3A, RG=3Ω | 120 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-15V ID=-3A, RG=3Ω | 350 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-2A | -1.2 | V | ||
2507230935_ElecSuper-SI2307A-ES_C21713841.pdf
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