Low RDS ON N Channel MOSFET ElecSuper ESN7534 Designed for DC DC Conversion and Charging Circuit Applications
Key Attributes
Model Number:
ESN7534
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
RDS(on):
4mΩ@10V;6.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
275pF
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
ESN7534
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN7534 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 62.7 | A | ||
| Continuous Drain Current | ID | TC=100°C | 39.6 | A | ||
| Maximum Power Dissipation | PD | 34.7 | W | |||
| Pulsed Drain Current | IDM | 250.7 | A | |||
| Avalanche Energy, Single Pulsed | EAS | Tj=25°C, VDD=25V, VG=10V, L=0.5mH, Rg=25Ω | 92 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 3.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 4.0 | 5.2 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=15A | 7.4 | 8.7 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1916 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 217 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 183 | pF | ||
| Total Gate Charge | QG | VGS=0 to 10V, VDS=15V, ID =30 A | 37 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=15V, ID =30 A | 7.4 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=15V, ID =30 A | 8.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V, ID=30A, RG=3Ω | 8.4 | ns | ||
| Rise Time | tr | VGS=10V, VDD=15V, ID=30A, RG=3Ω | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=15V, ID=30A, RG=3Ω | 32 | ns | ||
| Fall Time | tf | VGS=10V, VDD=15V, ID=30A, RG=3Ω | 9 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2509151929_ElecSuper-ESN7534_C5140352.pdf
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