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quality SOT 23 Package N Channel MOSFET ElecSuper ESBSS123LT1G Suitable for Power Switch and DC DC Conversion factory
quality SOT 23 Package N Channel MOSFET ElecSuper ESBSS123LT1G Suitable for Power Switch and DC DC Conversion factory

SOT 23 Package N Channel MOSFET ElecSuper ESBSS123LT1G Suitable for Power Switch and DC DC Conversion

Key Attributes
Model Number: ESBSS123LT1G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
290mA
RDS(on):
2.7Ω@10V;2.95Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
Output Capacitance(Coss):
2.8pF
Input Capacitance(Ciss):
29pF@25V
Pd - Power Dissipation:
350mW
Mfr. Part #:
ESBSS123LT1G
Package:
SOT-23
Product Description

ESBSS123LT1G SuperMOS SOT-23 N-channel MOSFET

The ESBSS123LT1G is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Product Series: SuperMOS
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage BVDSS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TA=25°C 0.29 A
Continuous Drain Current ID TA=70°C 0.20 A
Maximum Power Dissipation PD 0.35 W
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 150 °C
Junction-to-Ambient Thermal Resistance RθJA t ≤10s 357 °C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 100 nA
Gate-to-source Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 1.0 1.8 2.5 V
Drain-to-source On-resistance RDS(on) VGS=10V, ID=0.2A 2.70 3.5 Ω
Drain-to-source On-resistance RDS(on) VGS=4.5V, ID=0.18A 2.95 4.2 Ω
Input Capacitance CISS VGS=0V, f=1MHz, VDS=25V 29 pF
Output Capacitance COSS VGS=0V, f=1MHz, VDS=25V 2.8 pF
Reverse Transfer Capacitance CRSS VGS=0V, f=1MHz, VDS=25V 2.0 pF
Gate Resistance Rg f=1MHz 1.3 Ω
Forward Voltage VSD VGS=0V, IS=0.2A 0.45 1.5 V

2504101957_ElecSuper-ESBSS123LT1G_C42420862.pdf

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