ElecSuper ESS2022A P Channel MOSFET offering low RDS ON and high density cell design for power circuits
Key Attributes
Model Number:
ESS2022A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
11A
RDS(on):
11mΩ@4.5V;14mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
235pF
Output Capacitance(Coss):
275pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
2.11nF
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
ESS2022A
Package:
SOP-8
Product Description
Product Overview
The ESS2022A is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering high density cell design, a rugged construction, and avalanche rating. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESS2022A
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: www.elecsuper.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25°C | -11 | A | ||
| TA=100°C | -7 | A | ||||
| Maximum Power Dissipation | PD | 3.1 | W | |||
| Pulsed Drain Current | IDM | -44 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Resistance | RθJA | Single Operation | 40 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.65 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-10A | 11 | 17 | mΩ | |
| VGS=-2.5V, ID=-6.5A | 14 | 21 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-10V | 2110 | pF | ||
| Output Capacitance | COSS | 275 | pF | |||
| Reverse Transfer Capacitance | CRSS | 235 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V, ID=-10A | 28 | nC | ||
| Gate-to-Source Charge | QGS | 4 | nC | |||
| Gate-to-Drain Charge | QGD | 7 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, ID=-10A, RG=3Ω | 9.5 | ns | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(OFF) | 40 | ns | |||
| Fall Time | tf | 35 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=-10A | -1.5 | V | ||
2504101957_ElecSuper-ESS2022A_C42412309.pdf
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