Low gate charge N channel MOSFET FETek FKBA3006 optimized for synchronous buck converter applications
Key Attributes
Model Number:
FKBA3006
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
81A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 N-channel
Output Capacitance(Coss):
267pF
Input Capacitance(Ciss):
2.295nF
Pd - Power Dissipation:
59W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
FKBA3006
Package:
PRPAK(5x6)
Product Description
Product Overview
The FKBA3006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKBA3006
- Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | 30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 81 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 51 | A | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 15 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 12 | A | ||
| IDM | Pulsed Drain Current | 160 | A | ||
| EAS | Single Pulse Avalanche Energy | 115.2 | mJ | ||
| IAS | Avalanche Current | 48 | A | ||
| PD@TC=25 | Total Power Dissipation | 59 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| Thermal Data | |||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | --- | 2.1 | /W | |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=250uA) | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V , ID=30A) | --- | 5.5 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V , ID=15A) | --- | 9 | mΩ | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =250uA) | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=24V , VGS=0V , TJ=25) | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current (VGS=±20V , VDS=0V) | --- | ±100 | nA | |
| gfs | Forward Transconductance (VDS=5V , ID=30A) | 43 | --- | S | |
| Qg | Total Gate Charge (VDS=15V , VGS=4.5V , ID=15A) | 20 | --- | nC | |
| Ciss | Input Capacitance (VDS=15V , VGS=0V , f=1MHz) | 2295 | --- | pF | |
| Coss | Output Capacitance (VDS=15V , VGS=0V , f=1MHz) | 267 | --- | pF | |
| Crss | Reverse Transfer Capacitance (VDS=15V , VGS=0V , f=1MHz) | 210 | --- | pF | |
| Diode Characteristics | |||||
| IS | Continuous Source Current (VG=VD=0V) | --- | 81 | A | |
| ISM | Pulsed Source Current | --- | 160 | A | |
| VSD | Diode Forward Voltage (VGS=0V , IS=1A , TJ=25) | --- | 1 | V | |
| trr | Reverse Recovery Time (IF=30A , dI/dt=100A/µs , TJ=25) | 14 | --- | nS | |
| Qrr | Reverse Recovery Charge (IF=30A , dI/dt=100A/µs , TJ=25) | 5 | --- | nC | |
2411220215_FETek-FKBA3006_C2758591.pdf
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