ElecSuper BSS169 N Channel MOSFET featuring trench technology for power switch and low leakage current
Key Attributes
Model Number:
BSS169
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
290mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V;2.95Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
2.8pF
Input Capacitance(Ciss):
29pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS169
Package:
SOT-23
Product Description
Product Overview
The BSS169 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, and low leakage current. This product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 0.29 | A | ||
| Continuous Drain Current | ID | TA=70°C | 0.20 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250µA | 1.0 | 1.8 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.2A | 2.70 | 3.5 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.18A | 2.95 | 4.2 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 29 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 2.8 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 2.0 | pF | ||
| Gate Resistance | Rg | f=1MHz | 1.3 | Ω | ||
| Forward Voltage | VSD | VGS=0V, IS=0.2A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-BSS169_C41365204.pdf
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