High Reliability N Channel Transistor ElecSuper AON6512 ES for Power Switching and Charging Circuits
Key Attributes
Model Number:
AON6512-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
RDS(on):
1.15mΩ@10V;1.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
1.71nF
Input Capacitance(Ciss):
4.05nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
AON6512-ES
Package:
PDFN5x6-8L
Product Description
Product Overview
The AON6512-ES is an N-Channel enhancement mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), making it reliable and rugged with avalanche rating and low leakage current.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.5 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.15 | 1.5 | m | |
| VGS=4.5V, ID=20A | 1.5 | 2.2 | m | |||
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 150 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 4050 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 1710 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 140 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=10V, ID=30A | 68 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=10V, ID=30A | 12 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=10V, ID=30A | 17 | nC | ||
| Continuous Drain Current | ID | TC=25C | 120 | A | ||
| TC=100C | 78 | A | ||||
| Maximum Power Dissipation | PD | TC=25C | 120 | W | ||
| TC=100C | 48 | W | ||||
| Pulsed Drain Current | IDM | a | 480 | A | ||
| Avalanche Current | IAS | (L=0.5mH) | 43 | A | ||
| Avalanche energy | EAS | 462 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | a | 1.04 | C/W | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 0.45 | 1.2 | V |
2504101957_ElecSuper-AON6512-ES_C19725103.pdf
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