ElecSuper ES3N06G AB3 R N channel MOSFET designed for power switch and charging circuit applications
Key Attributes
Model Number:
ES3N06G-AB3-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
RDS(on):
95mΩ@10V;125mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Output Capacitance(Coss):
29pF
Pd - Power Dissipation:
5.2W
Input Capacitance(Ciss):
206pF
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
ES3N06G-AB3-R
Package:
SOT-89
Product Description
ES3N06G-AB3-R SuperMOS SOT-89 N-channel MOSFET
The ES3N06G-AB3-R is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOT-89
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
- Origin: www.elecsuper.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25C | 5 | A | ||
| TA=75C | 3.9 | |||||
| Maximum Power Dissipation | PD | 5.2 | W | |||
| Pulsed Drain Current | IDM | 20 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 4 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 4 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 18 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=2.5A | 95 | 135 | m | |
| VGS=4.5V, ID=2A | 125 | 195 | ||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 206 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 29 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 1.4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=25V, ID=2.5A | 4.2 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=25V, ID=2.5A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=25V, ID=2.5A | 1.1 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS25V, ID=2.5A, RG=2 | 14.7 | ns | ||
| Rise Time | tr | VGS=10V, VDS25V, ID=2.5A, RG=2 | 3.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS25V, ID=2.5A, RG=2 | 20.9 | ns | ||
| Fall Time | tf | VGS=10V, VDS25V, ID=2.5A, RG=2 | 2.7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.8 | 1.5 | V | |
2504101957_ElecSuper-ES3N06G-AB3-R_C42412322.pdf
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