FM 2060K N Channel Trench Power MOSFET with Low Gate Voltage Threshold and High Drain Current Rating

Key Attributes
Model Number: 2060K.
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+155℃
RDS(on):
4.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
285pF
Number:
-
Output Capacitance(Coss):
365pF
Input Capacitance(Ciss):
2.85nF
Pd - Power Dissipation:
64W
Gate Charge(Qg):
34nC@4.5V
Mfr. Part #:
2060K.
Package:
TO-252
Product Description

Product Overview

The 2060K. is an N-Channel Trench Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is designed for a wide variety of applications requiring high power and current handling capability.

Product Attributes

  • Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
  • Product Code: 2060K.
  • Document Number: S&CIC1874
  • Certifications: Lead free product is acquired, 100% UIS TESTED!, 100% Vds TESTED!
  • Package: TO-252(DPAK)

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSVGS=0V20V
Gate-Source VoltageVGSVDS=0V±12V
Drain Current-Continuous (Tc=25)ID(Note 1)60A
Drain Current-Continuous (Tc=100)ID45A
Drain Current-Continuous@ Current-PulsedIDM(Note 2)220A
Maximum Power Dissipation (Tc=25)PD64W
Maximum Power Dissipation (Tc=100)PD39W
Avalanche energyEAS(Note 3)256mJ
Operating Junction and Storage Temperature RangeTJ,TSTG-55155
Thermal Characteristic
Thermal Resistance,Junction-to-CaseRθJC1.85℃/W
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250μA20V
Zero Gate Voltage Drain CurrentIDSSVDS=20V,VGS=0V1μA
Gate-Body Leakage CurrentIGSSVGS=±12V,VDS=0V±100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250μA0.450.71.0V
Forward TransconductancegFSVDS=5V,ID=15A35S
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V, ID=20A(Tc=25℃)4.26.0
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V, ID=20A (Tc=125℃)6.010
Drain-Source On-State ResistanceRDS(ON)VGS=2.5V, ID=15A5.28.2
Dynamic Characteristics
Input CapacitanceCissVDS=15V,VGS=0V, f=1.0MHz2850pF
Output CapacitanceCossVDS=15V,VGS=0V, f=1.0MHz365pF
Reverse Transfer CapacitanceCrssVDS=15V,VGS=0V, f=1.0MHz285pF
Gate resistanceRgVGS=0V, VDS=0V,f=1.0MHz1.2Ω
Switching Times
Turn-on Delay Timetd(on)VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω18nS
Turn-on Rise TimetrVGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω52nS
Turn-Off Delay Timetd(off)VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω76nS
Turn-Off Fall TimetfVGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω26nS
Gate Charge
Total Gate ChargeQgVGS=4.5V, VDS=10V, ID=12A34nC
Gate-Source ChargeQgsVGS=4.5V, VDS=10V, ID=12A4nC
Gate-Drain ChargeQgdVGS=4.5V, VDS=10V, ID=12A13nC
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)ISD60A
Forward on VoltageVSDVGS=0V,IS=20A1.2V
Body Diode Reverse Recovery TimetrrIF=20A, dI/dt=100A/μs24ns
Body Diode Reverse Recovery ChargeQrrIF=20A, dI/dt=100A/μs11nC

2410010301_FM-2060K-_C841300.pdf

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