FM 2060K N Channel Trench Power MOSFET with Low Gate Voltage Threshold and High Drain Current Rating
Product Overview
The 2060K. is an N-Channel Trench Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is designed for a wide variety of applications requiring high power and current handling capability.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Code: 2060K.
- Document Number: S&CIC1874
- Certifications: Lead free product is acquired, 100% UIS TESTED!, 100% Vds TESTED!
- Package: TO-252(DPAK)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | VGS=0V | 20 | V | ||
| Gate-Source Voltage | VGS | VDS=0V | ±12 | V | ||
| Drain Current-Continuous (Tc=25) | ID | (Note 1) | 60 | A | ||
| Drain Current-Continuous (Tc=100) | ID | 45 | A | |||
| Drain Current-Continuous@ Current-Pulsed | IDM | (Note 2) | 220 | A | ||
| Maximum Power Dissipation (Tc=25) | PD | 64 | W | |||
| Maximum Power Dissipation (Tc=100) | PD | 39 | W | |||
| Avalanche energy | EAS | (Note 3) | 256 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 155 | ℃ | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.85 | ℃/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 0.45 | 0.7 | 1.0 | V |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 35 | S | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A(Tc=25℃) | 4.2 | 6.0 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A (Tc=125℃) | 6.0 | 10 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=15A | 5.2 | 8.2 | mΩ | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V, f=1.0MHz | 2850 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V, f=1.0MHz | 365 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, f=1.0MHz | 285 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 1.2 | Ω | ||
| Switching Times | ||||||
| Turn-on Delay Time | td(on) | VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω | 18 | nS | ||
| Turn-on Rise Time | tr | VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω | 52 | nS | ||
| Turn-Off Delay Time | td(off) | VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω | 76 | nS | ||
| Turn-Off Fall Time | tf | VGS=4.5V, VDS=15V, RL=0.75Ω,RGEN=3Ω | 26 | nS | ||
| Gate Charge | ||||||
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=12A | 34 | nC | ||
| Gate-Source Charge | Qgs | VGS=4.5V, VDS=10V, ID=12A | 4 | nC | ||
| Gate-Drain Charge | Qgd | VGS=4.5V, VDS=10V, ID=12A | 13 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Current(Body Diode) | ISD | 60 | A | |||
| Forward on Voltage | VSD | VGS=0V,IS=20A | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, dI/dt=100A/μs | 24 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, dI/dt=100A/μs | 11 | nC | ||
2410010301_FM-2060K-_C841300.pdf
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