Power Management N Channel Trench MOSFET FM FM6040K with Low Leakage Current and Robust Design
Key Attributes
Model Number:
FM6040K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+155℃
RDS(on):
21.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
1 N-channel
Output Capacitance(Coss):
98pF
Input Capacitance(Ciss):
1.345nF
Pd - Power Dissipation:
62.8W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
FM6040K
Package:
TO-252-2
Product Description
Product Overview
The FM6040K is an N-Channel Trench Power MOSFET designed for power management in DC/DC and switching applications. It offers high performance with a low RDS(ON) of 16.0m (typ.) at VGS = 10V and 19.8m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: FINE MADE MICROELECTRONICS GROUP CO., LTD.
- Model: FM6040K
- Document Number: S&CIC2115
- Channel Type: N-Channel
- Technology: Trench Power MOSFET
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
- Website: www.superchip.cn
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | V | 60 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=60V,VGS=0V | A | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | A | - | - | 50 |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 1.1 | 1.6 | 2.1 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | - | - | 100 |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V,IDS=20A | m | - | 16.0 | 21.5 |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | m | - | 19.8 | 26.5 |
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage | ISD=20A,VGS=0V | V | - | 0.86 | 1.26 |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/s | ns | - | 13 | - |
| Qrr | Reverse Recovery Charge | nC | - | 7.8 | - | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 4.8 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 1345 | - |
| Coss | Output Capacitance | pF | - | 98 | - | |
| Crss | Reverse Transfer Capacitance | pF | - | 64 | - | |
| td(ON) | Turn-on Delay Time | VDD= 30V,RG=2.5,IDS= 20A,VGS= 10V | ns | - | 8.2 | - |
| Tr | Turn-on Rise Time | ns | - | 38.6 | - | |
| td(OFF) | Turn-off Delay Time | ns | - | 24 | - | |
| Tf | Turn-off Fall Time | ns | - | 61 | - | |
| Gate Charge Characteristics | ||||||
| Qg(10V) | Total Gate Charge | VDS =48V, VGS=10VID=20A | nC | - | 28 | - |
| Qg(4.5V) | Total Gate Charge | nC | - | 12.5 | - | |
| Qgs | Gate-Source Charge | nC | - | 5.2 | - | |
| Qgd | Gate-Drain Charge | nC | - | 5.9 | - | |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | - | 60 | - | |
| VGSS | Gate-Source Voltage | V | - | 20 | - | |
| TJ | Junction Temperature Range | C | -55 | - | 155 | |
| TSTG | Storage Temperature Range | C | -55 | - | 155 | |
| IS | Source Current-Continuous(Body Diode) | Tc=25C, Mounted on Large Heat Sink | A | - | 40 | - |
| IDM | Pulsed Drain Current | Tc=25C | A | - | 90 | - |
| ID | Continuous Drain Current | Tc=25C | A | - | 40 | - |
| ID | Continuous Drain Current | Tc=100C | A | - | 27.5 | - |
| PD | Maximum Power Dissipation | Tc=25C | W | - | 62.8 | - |
| PD | Maximum Power Dissipation | Tc=100C | W | - | 30.3 | - |
| RJC | Thermal Resistance, Junction-to-Case | C/W | - | 2.48 | - | |
| RJA | Thermal Resistance, Junction-to-Ambient** | Surface mounted on FR-4 board. | C/W | - | 118 | - |
| EAS | Single Pulsed-Avalanche Energy*** | L=0.5mH, Limited by TJmax , starting TJ=25C, RG= 25,VGS =10V. | mJ | - | 96 | - |
2410121956_FM-FM6040K_C2932021.pdf
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