Low Resistance 20V N Channel MOSFET FM 8205A Designed for Lithium Battery and High Power Electronics
Key Attributes
Model Number:
.8205A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
22mΩ@4.5V,4.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
74.69pF@8V
Number:
2 N-Channel
Input Capacitance(Ciss):
522.3pF@8V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
6.24nC@4.5V
Mfr. Part #:
.8205A
Package:
SOT-23-6
Product Description
Product Overview
The .8205A is a 20V N-Channel Enhancement-Mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features a proprietary advanced planar technology, high-density ultra-low resistance design, and is suitable for high-power, high-current applications, particularly ideal for lithium battery applications. The device comes in a SOT23-6 package.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Origin: China
- Model: .8205A
- Package: SOT23-6
- Document Number: S&CIC1850
- Version: 1.0
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Key Characteristics | ||||||
| RDS(ON), Vgs@2.5V, Ids@3A | RDS(ON) | VGS = 2.5V,ID = 3.0A | -- | 28.0 | 32.0 | m |
| RDS(ON), Vgs@4.0V, Ids@4A | RDS(ON) | VGS = 4.0V,ID = 4.0A | -- | 24.0 | 30.0 | m |
| RDS(ON), Vgs@4.5V, Ids@4.5A | RDS(ON) | VGS = 4.5V,ID = 4.5A | -- | 22.0 | 26.0 | m |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.5 | -- | 1.5 | V |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -- | -- | 20 | V | |
| Gate-Source Voltage | VGS | -- | -- | 12 | V | |
| Continuous Drain Current | ID | TA = 25 | -- | -- | 6 | A |
| Pulsed Drain Current | IDM | -- | -- | 20 | A | |
| Maximum Power Dissipation | PD | TA = 25 | -- | -- | 2 | W |
| TA = 75 | -- | -- | 1.3 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | -- | 150 | ||
| Thermal Resistance (PCB mounted) | RJA | -- | 62.5 | -- | /W | |
| Electrical Characteristics | ||||||
| Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | -- | -- | V |
| Drain Leakage Current | IDSS | VDS = 20V, VGS = 0V | -- | -- | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 12V, ID=0uA | -- | -- | 100 | nA |
| Transconductance | gfs | VDS = 15V, ID = 6.0A | -- | 29 | -- | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 10V,ID = 6A | -- | 6.24 | 8.11 | nC |
| Gate-Source Charge | Qgs | VGS = 4.5V | -- | 1.64 | 2.13 | |
| Gate-Drain Charge | Qgd | -- | 1.34 | 1.74 | ||
| Turn-on Delay Time | td(on) | VDD = 10V,ID = 6A | -- | 10.4 | 20.8 | ns |
| Rise Time | tr | ID = 1A,VGS = 4.5V | -- | 4.4 | 8.8 | ns |
| Turn-off Delay Time | td(off) | -- | 27.36 | 54.72 | ns | |
| Fall Time | tf | -- | 4.16 | 8.32 | ns | |
| Input Capacitance | Ciss | VDS = 8V, VGS = 0V f=1.0MHz | -- | 522.3 | -- | pF |
| Output Capacitance | Coss | -- | 98.48 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 74.69 | -- | pF | |
| Diode Characteristics | ||||||
| Diode Forward Current | IS | -- | -- | 1.7 | A | |
| Diode Forward Voltage | VSD | IS = 1.7A, VGS = 0V | -- | -- | 1.2 | V |
2410121256_FM--8205A_C841290.pdf
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