N Channel MOSFET ElecSuper ESE6080K Featuring Trench Technology for Charging Circuit and Power Switch
Key Attributes
Model Number:
ESE6080K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
6mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
240pF@25V
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
3.82nF@25V
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
ESE6080K
Package:
TO-252
Product Description
Product Overview
The ESE6080K is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 80 | A | ||
| Continuous Drain Current | ID | TC=100°C | 48 | A | ||
| Maximum Power Dissipation | PD | 114 | W | |||
| Single Pulsed Avalanche Energy | EAS | Tj=25°C, VG=10V, VDD=30V, RG=25Ω, L=0.5mH, IAS=27A | 182 | mJ | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 1.1 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.0 | 2.8 | 4.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=30A | 6.0 | 7.8 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3820 | pF | ||
| Output Capacitance | COSS | 295 | pF | |||
| Reverse Transfer Capacitance | CRSS | 240 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=30A | 77 | nC | ||
| Gate-to-Source Charge | QGS | 21 | nC | |||
| Gate-to-Drain Charge | QGD | 24 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=30A , RGEN=1.8Ω | 18 | ns | ||
| Rise Time | tr | 88 | ns | |||
| Turn-Off Delay Time | td(OFF) | 37 | ns | |||
| Fall Time | tf | 85 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2504101957_ElecSuper-ESE6080K_C42420766.pdf
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