N Channel MOSFET ElecSuper ESS8810 Suitable for DC DC Conversion Power Switch and Charging Circuits
Key Attributes
Model Number:
ESS8810
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@4.5V;14mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Output Capacitance(Coss):
165pF
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
ESS8810
Package:
TSSOP8
Product Description
Product Description
The ESS8810 is an N-Channel enhancement MOS Field Effect Transistor. It utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25C | 9.5 | A | ||
| Continuous Drain Current | ID | TA=75C | 7.4 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 1.2 | W | ||
| Pulsed Drain Current | IDM | 38 | A | |||
| Avalanche Current, Single Pulse | IAS | 5.8 | A | |||
| Avalanche Energy, Single Pulse | EAS | 5 | mJ | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t ≤ 10 s | 62.5 | °C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 9.5 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 11 | 14.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=5A | 14 | 20.5 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1150 | pF | ||
| Output Capacitance | COSS | 165 | pF | |||
| Reverse Transfer Capacitance | CRSS | 150 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5A | 15 | nC | ||
| Gate-to-Source Charge | QGS | 1 | nC | |||
| Gate-to-Drain Charge | QGD | 3.5 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.35Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | 11 | ns | |||
| Turn-Off Delay Time | td(OFF) | 50 | ns | |||
| Fall Time | tf | 18 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=1A | 0.45 | 1.5 | V | |
2509161644_ElecSuper-ESS8810_C41365198.pdf
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