Low RDS ON N Channel MOSFET ElecSuper ESJL3400 Suitable for Various Power Electronics Applications
Key Attributes
Model Number:
ESJL3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
21mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF@10V
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
550pF@10V
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
ESJL3400
Package:
SOT-23
Product Description
Product Overview
The ESJL3400 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: R0 (Marking)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 30 | V |
| Gate-Source Voltage | VGS | - | - | - | ±12 | V |
| Continuous Drain Current | ID | TA=25°C a | - | - | 5.8 | A |
| Continuous Drain Current | ID | TA=70°C a | - | - | 4.6 | A |
| Maximum Power Dissipation | PD | TA=25°C a | - | - | 1.4 | W |
| Maximum Power Dissipation | PD | TA=70°C a | - | - | 0.9 | W |
| Pulsed Drain Current | IDM | b | - | - | 30 | A |
| Operating Junction Temperature | TJ | - | - | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | - | - | 1 | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.6 | 1.0 | 1.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5.8A | - | 21.0 | 28.0 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5.0A | - | 25.0 | 33.0 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=3.0A | - | 33.0 | 51.0 | mΩ |
| Forward Transconductance | gFS | VDS=5.0V, ID=5.8A | - | 7.8 | 15 | S |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | - | 550 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | - | 62 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | - | 48 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5.8A | - | 6.7 | - | nC |
| Threshold Gate Charge | QG(TH) | VGS=4.5V, VDS=10V, ID=5.8A | - | 0.75 | - | nC |
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5.8A | - | 1.65 | - | nC |
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5.8A | - | 1.78 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | - | 3.8 | - | ns |
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | - | 13.0 | - | ns |
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | - | 14.2 | - | ns |
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | - | 2.0 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=1.0A | - | 0.75 | 1.5 | V |
2504101957_ElecSuper-ESJL3400_C42420855.pdf
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