N channel MOSFET ElecSuper BSS138PW SOT 323 package suitable for power switching and DC DC conversion applications
Key Attributes
Model Number:
BSS138PW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
360mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
1 N-channel
Output Capacitance(Coss):
9.7pF
Input Capacitance(Ciss):
25pF
Pd - Power Dissipation:
236mW
Gate Charge(Qg):
650pC@4.5V
Mfr. Part #:
BSS138PW
Package:
SOT-323
Product Description
BSS138PW SuperMOS - SOT-323 N-channel MOSFET
The BSS138PW is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Package: SOT-323
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 0.36 | A | |||
| Maximum Power Dissipation | PD | 236 | mW | |||
| Pulsed Drain Current | IDM | a | 1.44 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 530 | °C/W | ||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V,TJ=25°C | 1.0 | uA | ||
| VDS=40V, VGS=0V, TJ=125°C | 100 | uA | ||||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.5 | 1.9 | Ω | |
| VGS=4.5V, ID=0.2A | 1.6 | 2.5 | Ω | |||
| VGS=2.5V, ID=0.1A | 2.7 | 4.5 | Ω | |||
| Charges, Capacitances and Gate Resistance | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =25V | 25 | 50 | pF | |
| Output Capacitance | COSS | 9.7 | 22 | pF | ||
| Reverse Transfer Capacitance | CRSS | 2.2 | 5 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=25V, ID=0.3A | 0.65 | 1 | nC | |
| Gate-to-Source Charge | QGS | 0.2 | nC | |||
| Gate-to-Drain Charge | QGD | 0.23 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=25V, ID=0.3A, RG=6Ω | 2.3 | 5 | ns | |
| Rise Time | tr | 19.2 | 40 | ns | ||
| Turn-Off Delay Time | td(OFF) | 6.3 | 12 | ns | ||
| Fall Time | tf | 23 | 50 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=0.5A | 0.86 | 1.5 | V | |
2504101957_ElecSuper-BSS138PW_C5224278.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
