power control module Fuji Electric 2MBI150VA-120-50 V series IGBT with 2 in 1 package and voltage drive
Key Attributes
Model Number:
2MBI150VA-120-50
Product Custom Attributes
Pd - Power Dissipation:
785W
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
12.6nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@150mA
Reverse Recovery Time(trr):
150ns
Mfr. Part #:
2MBI150VA-120-50
Package:
Screw Terminals
Product Description
Product Overview
The 2MBI150VA-120-50 is a high-speed IGBT module (V series) designed for AC-switch applications in UPS and PCS systems. It features voltage drive, low inductance module structure, and a 2-in-1 package, offering efficient and reliable performance.
Product Attributes
- Brand: Fuji Electric
- Model: 2MBI150VA-120-50
- Series: V series
- Package: 2-in-1
- Weight: 180g (typ.)
Technical Specifications
| Item | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | V CES | 1200 | V | |||
| Gate-Emitter voltage | V GES | 20 | V | |||
| Collector current (pulse) | I C pulse | 1ms | 150 | A | ||
| Collector power dissipation | P C | T C=100C | 300 | W | ||
| Junction temperature | T j | -40 | 150 | C | ||
| Storage temperature | T stg | -40 | 125 | C | ||
| Isolation voltage | V iso | Between terminal and copper base (AC: 1min.) | 2500 | V | ||
| Screw torque | Mounting Terminals M5 or M6 | 2.55.0 | Nm | |||
| Screw torque | Mounting Terminals M5 | 3.05.0 | Nm | |||
| Electrical Characteristics | ||||||
| Collector-Emitter saturation voltage | V CE(sat) | V GE=15V, I C=150A, T j=150C | 2.05 | V | ||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=150A, T j=150C | 1.85 | V | ||
| Gate-Emitter threshold voltage | V GE(th) | V CE=20V, I C=150mA | 6.0 | 6.5 | 7.2 | V |
| Zero gate voltage collector current | I CES | V GE=0V, V CE=1200V, T j=125C | 200 | A | ||
| Gate-Emitter leakage current | I GES | V CE=0V, V GE=20V | 1.0 | mA | ||
| Input capacitance | C ies | V CE=10V, VGE=0V, =1MHz | 12.6 | nF | ||
| Turn-on time | t on | V CC=600V, I C=150A, V GE=15V, R g=1.1, T j=150C, L s=30nH | 200 | nsec | ||
| Turn-off time | t off | V CC=600V, I C=150A, V GE=15V, R g=1.1, T j=150C, L s=30nH | 235 | nsec | ||
| Internal gate resistance | R g(int) | 5 | ||||
| Diode Characteristics | ||||||
| Forward on voltage | V F (terminal) | I F=150A, T j=150C | 1.70 | 2.15 | V | |
| Forward on voltage | V F (chip) | I F=150A, T j=150C | 1.85 | V | ||
| Reverse recovery time | t rr | I F=150A, -I C pulse=150A, di/dt=50A/s | 50 | nsec | ||
| Thermal Resistance | ||||||
| Thermal resistance (1device) | R th(j-c) | IGBT | 0.19 | C/W | ||
| Thermal resistance (1device) | R th(j-c) | FWD | 0.31 | C/W | ||
| Contact thermal resistance (1device) | R th(c-f) | with thermal compound | 0.050 | C/W | ||
2410121006_Fuji-Electric-2MBI150VA-120-50_C38665770.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
