Discrete IGBT Fuji Electric FGW40N120HD designed for loss and high speed switching in power electronics
Key Attributes
Model Number:
FGW40N120HD
Product Custom Attributes
Mfr. Part #:
FGW40N120HD
Package:
TO-247
Product Description
Fuji Electric FGW40N120HD Discrete IGBT
The FGW40N120HD is a high-speed V series Discrete IGBT designed for applications requiring low power loss, low switching surge, and high reliability. It offers excellent ruggedness, including RBSOA and SCSOA capabilities. This IGBT is suitable for use in uninterruptible power supplies, power conditioners, and power factor correction circuits.
Product Attributes
- Brand: Fuji Electric
- Product Type: Discrete IGBT (High-Speed V series)
Technical Specifications
| Item | Symbol | Conditions | Units | min. | typ. | max. | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | V | 1200 | ||||
| Gate-Emitter Voltage | VGES | DC | V | ±20 | |||
| Collector Current | IC@25 | TC=25°C,Tj=150°C | A | 70 | |||
| Collector Current | IC@100 | TC=100°C,Tj=150°C | A | 40 | |||
| Pulsed Collector Current | ICP | A | 120 | Note *1 | |||
| Turn-Off Safe Operating Area | VCE≤1200V,Tj≤175°C | A | 120 | ||||
| Diode Forward Current | IF@25 | TC=25°C,Tj=150°C | A | 52 | |||
| Diode Forward Current | IF@100 | TC=100°C,Tj=150°C | A | 30 | |||
| Diode Pulsed Current | IFP | A | 120 | Note *1 | |||
| Short Circuit Withstand Time | tSC | VCC≤600V,VGE=12V Tj≤150°C | µs | 5 | |||
| IGBT Max. Power Dissipation | PD_IGBT | TC=25°C | W | 340 | |||
| FWD Max. Power Dissipation | PD_FWD | TC=25°C | W | 190 | |||
| Operating Junction Temperature | Tj | °C | -40 | +175 | |||
| Storage Temperature | Tstg | °C | -55 | +175 | |||
| Electrical Characteristics | |||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | IC = 50µA, VGE = 0V | V | 1200 | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200V, VGE = 0V | µA | 250 | Tj=25°C | ||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200V, VGE = 0V | mA | 2 | Tj=175°C | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = ±20V | nA | 200 | |||
| Gate-Emitter Threshold Voltage | VGE (th) | VCE = +20V, IC = 40mA | V | 4.0 | 5.0 | 6.0 | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 40A | V | 1.8 | 2.34 | Tj=25°C | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 40A | V | 2.3 | Tj=175°C | ||
| Input Capacitance | Cies | VCE=25V VGE=0V f=1MHz | pF | 3000 | |||
| Output Capacitance | Coes | pF | 130 | ||||
| Reverse Transfer Capacitance | Cres | pF | 100 | ||||
| Gate Charge | QG | VCC = 600V IC = 40A VGE = 15V | nC | 300 | |||
| Turn-On Delay Time | td(on) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 35 | Tj = 25°C | ||
| Rise Time | tr | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 60 | Tj = 25°C | ||
| Turn-Off Delay Time | td(off) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 315 | Tj = 25°C | ||
| Fall Time | tf | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 40 | Tj = 25°C | ||
| Turn-On Energy | Eon | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 2.8 | Tj = 25°C | ||
| Turn-Off Energy | Eoff | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 1.8 | Tj = 25°C | ||
| Turn-On Delay Time | td(on) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 35 | Tj = 175°C | ||
| Rise Time | tr | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 60 | Tj = 175°C | ||
| Turn-Off Delay Time | td(off) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 350 | Tj = 175°C | ||
| Fall Time | tf | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 75 | Tj = 175°C | ||
| Turn-On Energy | Eon | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 4.8 | Tj = 175°C | ||
| Turn-Off Energy | Eoff | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 3.0 | Tj = 175°C | ||
| FWD Characteristics | |||||||
| Forward Voltage Drop | VF | IF=30A | V | 2.2 | 2.8 | Tj=25°C | |
| Forward Voltage Drop | VF | IF=30A | V | 1.8 | Tj=175°C | ||
| Diode Reverse Recovery Time | trr1 | VCC=30V,IF = 3.0A -di/dt=200A/µs | ns | 49 | |||
| Diode Reverse Recovery Time | trr2 | VCC=600V IF=30A -diF/dt=200A/µs | µs | 0.44 | Tj=25°C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=600V IF=30A -diF/dt=200A/µs | µC | 1.35 | Tj=25°C | ||
| Diode Reverse Recovery Time | trr2 | VCC=600V IF=30A -diF/dt=200A/µs | µs | 0.70 | Tj=175°C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=600V IF=30A -diF/dt=200A/µs | µC | 6.00 | Tj=175°C | ||
| Thermal Resistance Characteristics | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | °C/W | 50 | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | °C/W | 0.439 | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | °C/W | 0.781 | ||||
2511211130_Fuji-Electric-FGW40N120HD_C35616290.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
