Low RDS ON N Channel MOSFET ElecSuper ES2N7002SDW1T1G with ESD protection and high density cell design
Key Attributes
Model Number:
ES2N7002SDW1T1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.85Ω@10V,300mA
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF@25V
Input Capacitance(Ciss):
28pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.8nC@4.5V
Mfr. Part #:
ES2N7002SDW1T1G
Package:
SOT-363
Product Description
ES2N7002SDW1T1G SuperMOS - SOT-363
The ES2N7002SDW1T1G is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering high density cell design for low RDS(on), ESD protection (HBM: 2kV), and a reliable, rugged construction. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 0.3 | A | ||
| Continuous Drain Current | ID | TA=100 | 0.2 | A | ||
| Maximum Power Dissipation | PD | 350 | mW | |||
| Pulsed Drain Current | IDM | 1.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.85 | 2.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.05 | 3.0 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 28 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 11 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.3A | 1.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.3A | 0.3 | |||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.3A | 0.6 | |||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 2 | ns | ||
| Rise Time | tr | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 15 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 7 | ns | ||
| Fall Time | tf | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 20 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.3A | 1.5 | V | ||
2504101957_ElecSuper-ES2N7002SDW1T1G_C42420859.pdf
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