Low Gate Charge ElecSuper ESJ3404 N Channel MOSFET Designed for DC DC Conversion and Power Switching
Key Attributes
Model Number:
ESJ3404
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.2A
RDS(on):
17mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
255pF@15V
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
ESJ3404
Package:
SOT-23
Product Description
Product Overview
The ESJ3404 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating with low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOT-23
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TA=25°C) | ID | 6.2 | A | |||
| Continuous Drain Current (TA=75°C) | ID | 4.7 | A | |||
| Maximum Power Dissipation (TA=25°C) | PD | 1.4 | W | |||
| Maximum Power Dissipation (TA=75°C) | PD | 0.9 | W | |||
| Pulsed Drain Current | IDM | a | 24.8 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | a | 72 | 90 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5A | 17 | 24 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=4A | 26 | 38 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =15V | 255 | pF | ||
| Output Capacitance | COSS | 45 | pF | |||
| Reverse Transfer Capacitance | CRSS | 35 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=5A | 9.8 | 12 | nC | |
| Gate-to-Source Charge | QGS | 1.8 | 2.2 | nC | ||
| Gate-to-Drain Charge | QGD | 2.2 | 3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω | 5 | ns | ||
| Rise Time | tr | 3.2 | ns | |||
| Turn-Off Delay Time | td(OFF) | 24 | ns | |||
| Fall Time | tf | 6 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-ESJ3404_C42420784.pdf
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