Versatile P Channel MOSFET ElecSuper AO3415A Suitable for Power Switch Charging and DC DC Conversion
Key Attributes
Model Number:
AO3415A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V;36mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
750pF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
AO3415A
Package:
SOT-23-3L
Product Description
Product Overview
The AO3415A is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Model: AO3415A
- Package: SOT23-3L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | -4.9 | A | ||
| TA=75C | -3.8 | A | ||||
| Maximum Power Dissipation | PD | TA=25C | 1.39 | W | ||
| TA=75C | 0.83 | W | ||||
| Pulsed Drain Current | IDM | -15.6 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation (t10s) | 65 | 90 | C/W | |
| Junction-to-Lead Thermal Resistance | RJL | 43 | 52 | C/W | ||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-20V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=10V, VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.7 | -0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 30 | 37 | m | |
| VGS=-2.5V, ID=-4A | 36 | 47 | m | |||
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 750 | pF | ||
| Output Capacitance | COSS | 115 | pF | |||
| Reverse Transfer Capacitance | CRSS | 80 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V ID=-4A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | 1 | ||||
| Gate-to-Drain Charge | QGD | 2.3 | ||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V RL=2.5, RG=3 | 13 | ns | ||
| Rise Time | tr | 10 | ns | |||
| Turn-Off Delay Time | td(OFF) | 20 | ns | |||
| Fall Time | tf | 30 | ns | |||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -1.5 | V |
2504101957_ElecSuper-AO3415A_C5350990.pdf
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