Low Gate Charge N Channel MOSFET ElecSuper IRFB4110PBF ES Suitable for High Current Power Switching
Key Attributes
Model Number:
IRFB4110PBF(ES)
Product Custom Attributes
Mfr. Part #:
IRFB4110PBF(ES)
Package:
TO-220
Product Description
Product Overview
The IRFB4110PBF(ES) is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Part Number: IRFB4110PBF(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C, Silicon limit | 182 | A | ||
| Continuous Drain Current | ID | TC=25C, Package limit | 180 | A | ||
| Continuous Drain Current | ID | TC=100C, Silicon limit | 115 | A | ||
| Maximum Power Dissipation | PD | 278 | W | |||
| Pulsed Drain Current | IDM | 720 | A | |||
| Avalanche energy | EAS | 702 | mJ | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Resistance | ||||||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 0.45 | °C/W | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 50 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.5 | 4.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=50A | 3.45 | 4.2 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=50A | 94 | |||
| Input Capacitance | CISS | VGS=0V, f=250KHz, VDS=50V | 7116 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=250KHz, VDS=50V | 1067 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=250KHz, VDS=50V | 24 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=80V, ID=50A | 115 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=80V, ID=50A | 28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=80V, ID=50A | 33 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=50A, Rg=10Ω | 75 | ns | ||
| Rise Time | tr | VGS=10V, VDD=50V, ID=50A, Rg=10Ω | 176 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=50A, Rg=10Ω | 110 | ns | ||
| Fall Time | tf | VGS=10V, VDD=50V, ID=50A, Rg=10Ω | 66.7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=50A | 1.1 | V | ||
2506121200_ElecSuper-IRFB4110PBF-ES_C49108746.pdf
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