P channel MOSFET FETek FKN0107 featuring low gate charge and improved Cdv dt effect for load switches
Key Attributes
Model Number:
FKN0107
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
900mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
553pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
FKN0107
Package:
SOT-23
Product Description
Product Overview
The FKN0107 is a high cell density trenched P-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: P-Ch 100V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage, VGS=0V , ID=-250uA | -100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance, VGS=-10V , ID=-0.8A | 0.52 | 0.65 | Ω | ||
| VGS(th) | Gate Threshold Voltage, VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current, VDS=-80V , VGS=0V , TJ=25 | 10 | uA | |||
| IGSS | Gate-Source Leakage Current, VGS=±20V , VDS=0V | ±100 | nA | |||
| Qg | Total Gate Charge (-4.5V), VDS=-15V , VGS=-4.5V , ID=-0.5A | 4.5 | nC | |||
| Ciss | Input Capacitance, VDS=-15V , VGS=0V , f=1MHz | 553 | pF | |||
| Absolute Maximum Ratings | ID | Continuous Drain Current, VGS @ -10V, TA=25 | -0.9 | A | ||
| IDM | Pulsed Drain Current | -1.8 | A | |||
| PD | Total Power Dissipation, TA=25 | 1 | W | |||
| Thermal Data | RJA | Thermal Resistance Junction-ambient | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case | 80 | /W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| Diode Characteristics | IS | Continuous Source Current, VG=VD=0V | -0.9 | A | ||
| ISM | Pulsed Source Current | -1.8 | A | |||
| VSD | Diode Forward Voltage, VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
2411220202_FETek-FKN0107_C2926959.pdf
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