N channel MOSFET FETek FKBB3052 featuring fast switching and low leakage current for power conversion

Key Attributes
Model Number: FKBB3052
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
RDS(on):
6.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
814pF@15V
Pd - Power Dissipation:
24W
Gate Charge(Qg):
2.4nC@4.5V
Mfr. Part #:
FKBB3052
Package:
PRPAK(3x3)
Product Description

Product Overview

The FKBB3052 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: FETek Technology Corp.
  • Product Type: N-Ch 30V Fast Switching MOSFETs
  • Certifications: RoHS, Green Device Available
  • Origin: Taiwan (implied by .tw domain)

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 5 6.3 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=15A --- 6.9 9 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 43 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 8 --- nC
Qgs Gate-Source Charge --- --- 2.4 --- nC
Qgd Gate-Drain Charge --- --- 3.2 --- nC
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=15A --- 7.1 --- ns
Tr Rise Time --- --- 40 --- ns
Td(off) Turn-Off Delay Time --- --- 15 --- ns
Tf Fall Time --- --- 6 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 814 --- pF
Coss Output Capacitance --- --- 498 --- pF
Crss Reverse Transfer Capacitance --- --- 41 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- 24 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1 V
trr Reverse Recovery Time IF=15A , di/dt=100A/s , TJ=25 --- 34 --- nS
Qrr Reverse Recovery Charge --- --- 15 --- nC

2411220416_FETek-FKBB3052_C2441211.pdf

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