N channel power MOSFET FM 3040K H designed for stable performance in power switching and UPS systems
Key Attributes
Model Number:
3040K/H
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 N-channel
Output Capacitance(Coss):
166pF
Input Capacitance(Ciss):
1.019nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
19nC
Mfr. Part #:
3040K/H
Package:
TO-252-2
Product Description
Product Overview
The 3040K/H is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It offers extremely low RDS(on), good stability and uniformity, and is 100% avalanche tested. This device is suitable for use in UPS, power switching, and general purpose applications, providing excellent package for good heat dissipation.
Product Attributes
- Brand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.)
- Model: 3040K/H
- File Number: S&CIC1966
- Technology: N-channel Enhancement Mode Power MOSFET
- Website: www.superchip.cn
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 40 | A | ||
| ID | Continuous Drain Current | TC = 100 | 26* | A | ||
| IDM | Pulsed Drain Current | note1 | 135* | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 80 | mJ | ||
| PD | Power Dissipation | TC = 25 | 50 | W | ||
| RJC | Thermal Resistance, Junction to Case | 1.83 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSSF | Gate Leakage Current, Forward | VDS=0V, VGS=20V | - | - | 100 | nA |
| IGSSR | Gate Leakage Current, Reverse | VDS=0V, VGS=-20V | - | - | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=20A | - | 5.8 | 7.5 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=15A | - | 10.5 | 13.5 | m |
| gFS | Forward Transconductance | VDS = 5 V, ID = 15 A (Note 3) | 20 | - | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 1019 | - | pF |
| Coss | Output Capacitance | - | 166 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 141 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=20A, VGS=10V | - | 19 | - | nC |
| Qgs | Gate-Source Charge | - | 6.3 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 4.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=15V, ID=12A, VGS=10V, RG=6Ohm (Note 3, 4) | - | 6 | - | ns |
| tr | Turn-on Rise Time | - | 24 | - | ns | |
| td(off) | Turn-off Delay Time | - | 28 | - | ns | |
| tf | Turn-off Fall Time | - | 27 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 40 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 135 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=40A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=12A,dI/dt=100A/s | - | 21 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 9 | - | nC | |
2410121937_FM-3040K-H_C2932012.pdf
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