Power Management N Channel Trench MOSFET FM 3060K Featuring Low Gate Charge and High Current Handling
Key Attributes
Model Number:
3060K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
5.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
185pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.45nF@15V
Pd - Power Dissipation:
65W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
3060K
Package:
TO-252-2
Product Description
Product Overview
The 3060K is an N-Channel Trench Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This device is suitable for a wide variety of applications including PWM applications, load switches, and power management, providing high power and current handling capability.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Code: 3060K
- Document Number: S&CIC1695
- Channel Type: N-Channel
- Technology: Trench Power MOSFET
- Certifications: 100% UIS TESTED!, 100% Vds TESTED!
- Package: TO-252 (DPAK)
- Lead Status: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS=0V | 30 | V | ||
| Gate-Source Voltage | VGS | VDS=0V | 20 | V | ||
| Drain Current-Continuous | ID | Tc=25 (Note 1) | 60 | A | ||
| Drain Current-Continuous | ID | Tc=100 | 38 | A | ||
| Drain Current-Continuous@ Current-Pulsed | IDM | Current-Pulsed (Note 2) | 250 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 65 | W | ||
| Maximum Power Dissipation | PD | Tc=100 | 33 | W | ||
| Avalanche energy | EAS | (Note 3) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance,Junction-to-Case | RJC | 2.3 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V |
| Forward Transconductance | gFS | VDS=5V,ID=20A | 20 | S | ||
| Drain-Source On-State Resistance | RDS (ON) | VGS=10V, ID=20A(Tc=25) | 5.5 | 7.0 | m | |
| Drain-Source On-State Resistance | RDS (ON) | VGS=10V, ID=20A (Tc=125) | 7.3 | 11 | m | |
| Drain-Source On-State Resistance | RDS (ON) | VGS=5V, ID=15A | 7.8 | 12 | m | |
| Input Capacitance | Ciss | VDS=15V,VGS= 0V,f=1.0MHz | 1450 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS= 0V,f=1.0MHz | 230 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS= 0V,f=1.0MHz | 185 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 1.7 | |||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=15V, RL=0.75,RGEN= | 9 | nS | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=15V, RL=0.75,RGEN= | 26 | nS | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=15V, RL=0.75,RGEN= | 35 | nS | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=0.75,RGEN= | 8 | nS | ||
| Total Gate Charge | Qg | VGS=10V, VDS=25V, ID=14A | 35 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=25V, ID=14A | 6 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=25V, ID=14A | 12 | nC | ||
| Source-Drain Current | ISD | Body Diode | 60 | A | ||
| Forward on Voltage | VSD | VGS=0V,IS=20A | 1.2 | V |
2411121146_FM-3060K_C841302.pdf
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