RoHS Compliant P Channel MOSFET GL GL12P03-8 Featuring Low Gate Charge and Ultra Low RDS ON in SOP 8 Package
Key Attributes
Model Number:
GL12P03-8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Output Capacitance(Coss):
220pF
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
GL12P03-8
Package:
SOP-8
Product Description
Product Overview
The GL12P03-8 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features a high-density cell design for ultra-low Rdson and is housed in a RoHS-compliant SOP-8 package. This MOSFET is suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. It offers fully characterized avalanche voltage and current, with an excellent package for good heat dissipation.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Material: Silicon
- Package Type: SOP-8
- Certification: RoHS standard compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| General Description | ||||
| RDS(ON) | VGS=10V | <14 (Typ 11) | m | |
| Absolute Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | -30 | V | |
| ID | Continuous Drain Current | -12 | A | |
| ID | Continuous Drain Current | TC = 70 C | -10 | A |
| IDM | Pulsed Drain Current | -48 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| EAS | L=0.5mH | 140 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 3.0 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | -30 | V |
| IDSS | Drain to Source Leakage Current | VDS=-30V, VGS= 0V,Ta=25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -0.1 A |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=-10V,ID=-10A | -- | 11 (Typ) / 14 (Max) m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | -1 | -3.0 V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=-5V,ID=-10A | 20 | -- S |
| Ciss | Input Capacitance | VGS=0V,VDS=-15V, f=1.0MHz | -- | 1800 pF |
| Coss | Output Capacitance | -- | 220 pF | |
| Crss | Reverse Transfer Capacitance | -- | 180 pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | VDD=-15V,ID=-10A, VGS=-10V,RG=3 | -- | 10 ns |
| tr | Rise Time | -- | 9 ns | |
| td(OFF) | Turn-Off Delay Time | -- | 26 ns | |
| tf | Fall Time | -- | 11 ns | |
| Qg | Total Gate Charge | VDD=-15V, ID=-10A, VGS=-10V | -- | 25 nC |
| Qgs | Gate to Source Charge | -- | 4.0 nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 6 nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -- | -12 A | |
| VSD | Diode Forward Voltage | IS=-12A,VGS=0V | -- | -1.5 V |
| trr | Reverse Recovery Time | IS=-12A,Tj = 25C, dIF/dt=100A/us, VGS=0V | -- | 38 ns |
| Qrr | Reverse Recovery Charge | -- | 30 nC | |
| RJC | Junction-to-Case | 41.7 | /W | |
2410121342_GL-GL12P03-8_C2886405.pdf
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