MMBT3906 PNP transistor epitaxial planar die construction designed for electronic device performance
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
MMBT3906 PNP TRANSISTOR
The MMBT3906 is a PNP epitaxial planar die construction transistor, serving as the complementary type to the MMBT3904 NPN transistor. It is suitable for various electronic applications requiring PNP transistor functionality.
Product Attributes
- Marking Type number: MMBT3906
- Marking code: 2A
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Max | Unit |
| MAXIMUM RATINGS | |||||
| VCBO | CollectorBase Voltage | -40 | V | ||
| VCEO | CollectorEmitter Voltage | -40 | V | ||
| VEBO | EmitterBase Voltage | -5 | V | ||
| IC | Collector Current Continuous | -0.2 | A | ||
| PC | Collector Dissipation | (Ta=25 unless otherwise noted) | 0.2 | W | |
| RthJA | Thermal Resistance From Junction To Ambient | 625 | /W | ||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55~+150 | |||
| ELECTRICAL CHARACTERISTICS | |||||
| V(BR)CBO | Collector-base breakdown voltage | IC =-10uA, IE = 0 | -40 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC =-1 mA, IB = 0 | -40 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE =-10uA, IC = 0 | -5 | V | |
| ICBO | Collector cut-off current | VCB =-40V, IE = 0 | -50 | nA | |
| ICEX | Collector cut-off current | VC =-30V, IE = 0 | -100 | nA | |
| hFE1 | DC current gain | VC =-20V, IC =-10mA | 300 | ||
| hFE2 | DC current gain | VCE =-3V, IC =-10mA, IB1= 1mA | 300 | ||
| hFE3 | DC current gain | VCE =-3V, IC =-10mA,IB1= 1mA | 300 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC =-10mA, IB =-1mA | -0.3 | V | |
| VCE(sat) | Collector-emitter saturation voltage | IC =-50mA, IB =-5mA | -0.95 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC =-10mA, IB =-1mA | -0.77 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC =-50mA, IB =-5mA | -1.2 | V | |
| fT | Transition frequency | IC =-10mA, VCE =-20V, f=100MHz | 300 | MHz | |
| td | Delay time | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100 | ns | ||
| tr | Rise time | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100 | ns | ||
| ts | Storage time | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100 | ns | ||
| tf | Fall time | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100 | ns | ||
| IEBO | Emitter cut-off current | VEB =-5V, IC = 0 | -100 | nA | |
2410010232_GOODWORK-MMBT3906_C909755.pdf
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