General purpose NPN transistor GOODWORK 2N3904 suitable for switching and amplification applications
Key Attributes
Model Number:
2N3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2N3904
Package:
SOT-23
Product Description
Product Overview
The 2N3904 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It offers complementary characteristics to the MMBT3906 and is suitable for various electronic circuits.
Product Attributes
- Brand: DEMACHEL
- Type: NPN Transistor
- Marking Code: 1AM
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| CollectorBase Voltage | VCBO | 60 | V | ||||
| CollectorEmitter Voltage | VCEO | 40 | V | ||||
| EmitterBase Voltage | VEBO | 6 | V | ||||
| Collector Current Continuous | IC | 200 | mA | ||||
| Collector Power Dissipation | PC | (Ta=25) | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RthJA | 625 | /W | ||||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC = 10uA, IE = 0 | 60 | V | |||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 1 mA, IB = 0 | 40 | V | |||
| Emitter-base breakdown voltage | V(BR)EBO | IE = 10uA, IC = 0 | 6 | V | |||
| Collector cut-off current | ICEX | VCB = 60V, IE = 0 | 100 | nA | |||
| Collector cut-off current | ICBO | VCB = 5V, IE = 0 | 30 | nA | |||
| Emitter cut-off current | IEBO | VEB = 5V, IC =0 | 35 | nA | |||
| DC current gain | hFE1 | VCE = 30V, VEB(off) =3V | 100 | ||||
| DC current gain | hFE2 | VCE = 1V, IC = 10mA | 100 | 300 | |||
| DC current gain | hFE3 | VCE = 1V, IC = 100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC = 50mA, IB = 5mA | 0.3 | V | |||
| Collector-emitter saturation voltage | VCE(sat) | VCC = 3V, IC = 10mA | 0.2 | 0.4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = 50mA, IB = 5mA | 0.95 | V | |||
| Transition frequency | fT | VCE = 20V, IC = 10mA, f=100MHz | 300 | MHZ | |||
| Transition frequency | fT | VCE = 20V, IC = 10mA, f=100MHz | 100 | MHZ | |||
| Delay time | td | VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA | 30 | ns | |||
| Rise time | tr | VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA | 35 | ns | |||
| Storage time | ts | VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA | 200 | ns | |||
| Fall time | tf | VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA | 50 | ns | |||
| Capacitance | Cob | VCB = 10V, f=1MHz | 1.0 | 1.2 | pF | ||
| Capacitance | Cib | VBE = 0.5V, f=1MHz | 10 | pF |
2508071805_GOODWORK-2N3904_C50176433.pdf
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