Dual transistor npn and pnp plastic encapsulated package GOODWORK BC847BPN for general electronic applications
Key Attributes
Model Number:
BC847BPN
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847BPN
Package:
SOT-363
Product Description
Product Overview
The BC847BPN is a plastic-encapsulated transistor featuring epitaxial die construction with two isolated NPN/PNP transistors in a single package. It is designed for general-purpose applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | TR1 (NPN) Test Conditions | Min | Typ | Max | Unit | TR2 (PNP) Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 50 | V | -50 | V | ||||||
| Collector-Emitter Voltage | VCEO | 45 | V | -45 | V | ||||||
| Emitter-Base Voltage | VEBO | 6 | V | -5 | V | ||||||
| Collector Current Continuous | IC | 0.1 | A | -0.1 | A | ||||||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | (Ta=25 unless otherwise noted) | 200 | mW | ||||
| Junction Temperature | TJ | 150 | 150 | ||||||||
| Storage Temperature | Tstg | -55 | 150 | -55 | 150 | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 50 | V | IC=-10A,IE=0 | -50 | V | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 45 | V | IC=-10mA,IB=0 | -45 | V | ||||
| Emitter-base breakdown voltage | V(BR)EBO | IE=1A,IC=0 | 6 | V | IE=-1A,IC=0 | -5 | V | ||||
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA | VCB=-30V,IE=0 | -15 | nA | ||||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 15 | nA | VEB=-5V,IC=0 | -15 | nA | ||||
| DC current gain | hFE | VCE=5V,IC=2mA | 200 | 475 | VCE=-5V,IC=-2mA | 200 | 475 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA,IB=0.5mA | 0.25 | V | IC=-10mA,IB=-0.5mA | -0.3 | V | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA,IB=5mA | 0.6 | V | IC=-100mA,IB=-5mA | -0.65 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA,IB=0.5mA | 0.7 | V | IC=-10mA,IB=-0.5mA | -0.7 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA,IB=5mA | 0.9 | V | IC=-100mA,IB=-5mA | -0.95 | V | ||||
| Base-emitter voltage | VBE(on) | VCE=5V,IC=2mA | 0.58 | 0.7 | V | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | ||
| Base-emitter voltage | VBE(on) | VCE=5V,IC=10mA | 0.72 | V | VCE=-5V,IC=-10mA | -0.82 | V | ||||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 4.5 | pF | VCB=-10V,IE=0,f=1MHz | 4.5 | pF | ||||
| Transition frequency | fT | VCE=5V,IC=10mA,f=100MHz | 100 | MHz | VCE=-5V,IC=-10mA,f=100MHz | 100 | MHz | ||||
| Noise figure | NF | VCE=5V,Ic=0.2mA, f=1kHz,Rg=2K,f=200Hz | 10 | dB | VCE=-5V,Ic=-0.2mA, f=1kHz,Rg=2K,f=200Hz | 10 | dB |
2506041705_GOODWORK-BC847BPN_C49023423.pdf
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