power diode FUXINSEMI MURA110T3G-FS with detailed thermal resistance and leakage current specifications
Product Overview
The MURA110T3G-FS is a component designed for applications requiring specific electrical and thermal characteristics. It is characterized by its maximum ratings and electrical and thermal properties, including reverse voltage, forward voltage, leakage current, and thermal resistance.
Product Attributes
- Compliant to Halogen-free
Technical Specifications
| Parameter | Symbol | Units | Value (Tj = 25C unless otherwise noted) |
|---|---|---|---|
| Maximum average forward rectified current | IO | A | 1.0 |
| Maximum RMS voltage | VRMS | V | 50 |
| Maximum continuous reverse voltage | VR | V | 100 |
| Maximum repetitive peak reverse voltage | VRRM | V | 100 |
| Maximum instantaneous forward voltage at IF = 1.0 A | VF | V | 0.66 |
| Maximum reverse leakage current at rated VR | IR | A | 50 |
| Typical thermal resistance junction to ambient (Note 3) | RJA | C / W | 50 |
| Typical thermal resistance junction to case (Note 3) | RJC | C / W | 2.0 |
| Operating junction temperature range | TJ | C | -65 to 175 |
| Storage temperature range | TSTG | C | -65 to 175 |
| Maximum instantaneous forward voltage at IF = 1.0 A | VF | V | 0.875 |
| Typical junction capacitance (Note 1) | CJ | pF | 15 |
| Maximum reverse recovery time (Note 2) | trr | ns | 5.0 |
| Non-repetitive peak forward surge current 8.3ms single half sine-wave | IFSM | A | 100 |
Notes:
- 1: Measured at 1 MHz and applied reverse voltage of 4.0 VDC
- 2: Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
- 3: Mounted on FR-4 PCB Copper, minimum recommended pad layout
2512291555_FUXINSEMI-MURA110T3G-FS_C22383361.pdf
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