Power Switching N Channel MOSFET GL GL30N03A4 Featuring Low RDS ON and RoHS Compliant TO 252 Package
Key Attributes
Model Number:
GL30N03A4
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
99pF@15V
Input Capacitance(Ciss):
938pF@15V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
GL30N03A4
Package:
TO-252-2
Product Description
Product Overview
The GL30N03A4 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent low RDS(ON) and minimal gate charge, making it ideal for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is housed in a RoHS-compliant TO-252 package, ensuring good heat dissipation.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: TO-252
- Compliance: RoHS standard
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||||
| Drain-to-Source Voltage | VDSS | 30 | V | |||
| Continuous Drain Current | ID | 30 | A | |||
| Pulsed Drain Current | IDM | a1 | 80 | A | ||
| Gate-to-Source Voltage | VGS | 20 | V | |||
| Power Dissipation | PD | 40 | W | |||
| Single Pulse Avalanche Energy | EAS | a5 | 72 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | 175 | |||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 30 | -- | -- | V |
| Drain to Source Leakage Current | IDSS | VDS=30V, VGS= 0V,Ta = 25 | -- | -- | 1.0 | A |
| Gate to Source Forward Leakage | IGSS(F) | VGS=+20V | -- | -- | 0.1 | A |
| Gate to Source Reverse Leakage | IGSS(R) | VGS=-20V | -- | -- | -0.1 | A |
| ON Characteristics (a3) | ||||||
| Drain-to-Source On-Resistance | RDS(ON) | VGS=10V,ID=20A | -- | 10 | 15 | m |
| Drain-to-Source On-Resistance | RDS(ON) | VGS=4.5V,ID=15A | -- | 13 | 25 | m |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V |
| Dynamic Characteristics (a4) | ||||||
| Forward Transconductance | gfs | VDS=5V,ID=20A | 26 | -- | -- | S |
| Input Capacitance | Ciss | VGS=0V,VDS=15V f=1.0MHz | -- | 938 | -- | pF |
| Output Capacitance | Coss | -- | 142 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 99 | -- | pF | |
| Resistive Switching Characteristics (a4) | ||||||
| Turn-on Delay Time | td(ON) | RL=0.75,VDD=15V VGS=10V,RG=3.0 | -- | 5 | -- | ns |
| Rise Time | tr | -- | 12 | -- | ns | |
| Turn-Off Delay Time | td(OFF) | -- | 19 | -- | ns | |
| Fall Time | tf | -- | 6 | -- | ns | |
| Total Gate Charge | Qg | ID=20A,VDD=15V VGS=10V | -- | 17.5 | -- | nC |
| Gate to Source Charge | Qgs | -- | 3.0 | -- | nC | |
| Gate to Drain (Miller) Charge | Qgd | -- | 4.1 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (Body Diode) | IS | a2 | -- | -- | 30 | A |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V (a3) | -- | -- | 1.2 | V |
| Junction-to-Case Thermal Resistance | RJC | a2 | 3.125 | /W | ||
Notes:
- a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
- a2: Surface Mounted on FR4 Board, t10sec.
- a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
- a4: Guaranteed by design, not subject to production.
- a5: EAS condition: Tj=25, VDD=30V, VG=10V, L=0.5mH, Rg=25.
2411220025_GL-GL30N03A4_C2886417.pdf
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