Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C2M0045170D for Power Applications
Key Attributes
Model Number:
C2M0045170D
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-40℃~+150℃
RDS(on):
70mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.7pF
Input Capacitance(Ciss):
3.672nF
Pd - Power Dissipation:
520W
Output Capacitance(Coss):
171pF
Gate Charge(Qg):
188nC
Mfr. Part #:
C2M0045170D
Package:
TO-247-3
Product Description
Product Overview
The C2M0045170D is a Silicon Carbide (SiC) Power MOSFET with N-Channel Enhancement Mode. It is designed for power applications requiring high performance and efficiency.
Product Attributes
- Brand: Fuxinsemi
- Material: Silicon Carbide
Technical Specifications
| Parameter | Conditions | Typical Value | Unit |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 10 | pF |
| Capacitance (Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 100 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1000 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 10000 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 0 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 50 | pF |
| Capacitance (Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 100 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 150 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 200 | pF |
| Drain-Source Current (IDS) | Tj = -40 C, tp < 200 s, VGS = 10 V | -6 | A |
| Drain-Source Current (IDS) | Tj = -40 C, tp < 200 s, VGS = 5 V | -5 | A |
| Drain-Source Current (IDS) | Tj = -40 C, tp < 200 s, VGS = 15 V | -4 | A |
| Drain-Source Current (IDS) | Tj = -40 C, tp < 200 s, VGS = 0 V | -3 | A |
| Drain-Source Current (IDS) | Tj = -40 C, tp < 200 s, VGS = 20 V | -2 | A |
| Drain-Source Current (IDS) | Tj = 25 C, tp < 200 s, VGS = 10 V | -1 | A |
| Drain-Source Current (IDS) | Tj = 25 C, tp < 200 s, VGS = 5 V | 0 | A |
| Drain-Source Current (IDS) | Tj = 25 C, tp < 200 s, VGS = 15 V | -150 | A |
| Drain-Source Current (IDS) | Tj = 25 C, tp < 200 s, VGS = 0 V | -120 | A |
| Drain-Source Current (IDS) | Tj = 25 C, tp < 200 s, VGS = 20 V | -90 | A |
| Drain-Source Current (IDS) | Tj = 150 C, tp < 200 s, VGS = 10 V | -60 | A |
| Drain-Source Current (IDS) | Tj = 150 C, tp < 200 s, VGS = 5 V | -30 | A |
| Drain-Source Current (IDS) | Tj = 150 C, tp < 200 s, VGS = 15 V | 0 | A |
| Drain-Source Current (IDS) | Tj = 150 C, tp < 200 s, VGS = 0 V | -6 | A |
| Drain-Source Current (IDS) | Tj = 150 C, tp < 200 s, VGS = 20 V | -5 | A |
| Stored Energy (EOSS) | Drain to Source Voltage (VDS) | -4 | J |
| Stored Energy (EOSS) | Drain to Source Voltage (VDS) | -3 | J |
| Stored Energy (EOSS) | Drain to Source Voltage (VDS) | -2 | J |
| Stored Energy (EOSS) | Drain to Source Voltage (VDS) | -1 | J |
| Stored Energy (EOSS) | Drain to Source Voltage (VDS) | 0 | J |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 50 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 100 | pF |
| Capacitance (Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 150 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 200 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 250 | pF |
| Capacitance (Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 500 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 750 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1000 | pF |
| Capacitance (Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1250 | pF |
| Capacitance (Ciss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1500 | pF |
| Capacitance (Coss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | 1750 | pF |
2410010333_FUXINSEMI-C2M0045170D_C22365192.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
