Power Switching P Channel MOSFET GL GL40P04A4 Featuring Low RDS ON and High Avalanche Current Rating
Product Overview
The GL40P04A4 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. The product adheres to RoHS standards and is supplied in a TO-252 package.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Package Type: TO-252
- RoHS Standard: Compliant
- Channel Type: P-Channel
Technical Specifications
| Absolute Ratings (Tc= 25 unless otherwise specified) | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDSS | Drain-to-Source Voltage | -40 | V |
| ID | Continuous Drain Current | -40 | A |
| IDM | Pulsed Drain Current | -50 | A |
| VGS | Gate-to-Source Voltage | ±20 | V |
| PD | Power Dissipation | 80 | W |
| EAS | Single pulse avalanche energya5 | 544 | mJ |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | |
| Electrical Characteristics (Tc= 25 unless otherwise specified) | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| OFF Characteristics | |||
| VDSS | Drain to Source Breakdown Voltage | -40 | V |
| IDSS | Drain to Source Leakage Current | -1.0 | µA |
| IGSS(F) | Gate to Source Forward Leakage | 0.1 | µA |
| IGSS(R) | Gate to Source Reverse Leakage | -0.1 | µA |
| ON Characteristicsa3 | |||
| RDS(ON) | Drain-to-Source On-Resistance | 14 | mΩ |
| VGS(TH) | Gate Threshold Voltage | -1.0 to -3.0 | V |
| Dynamic Characteristicsa4 | |||
| gfs | Forward Transconductance | 34 | S |
| Ciss | Input Capacitance | 2960 | pF |
| Coss | Output Capacitance | 370 | pF |
| Crss | Reverse Transfer Capacitance | 310 | pF |
| Resistive Switching Characteristicsa4 | |||
| td(ON) | Turn-on Delay Time | 10 | ns |
| tr | Rise Time | 18 | ns |
| td(OFF) | Turn-Off Delay Time | 38 | ns |
| tf | Fall Time | 24 | ns |
| Qg | Total Gate Charge | 72 | nC |
| Qgs | Gate to Source Charge | 14 | nC |
| Qgd | Gate to Drain (Miller)Charge | 15 | nC |
| Source-Drain Diode Characteristics | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| IS | Continuous Source Current a2(Body Diode) | -40 | A |
| VSD | Diode Forward Voltagea3 | -1.2 | V |
| Symbol | Parameter | Typ. | Units |
|---|---|---|---|
| RθJC | Junction-to-Casea2 | 1.88 | °C/W |
a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t≤10sec.
a3: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
a4: Guaranteed by design, not subject to production.
a5: EAS conditionï¼´Tj=25°C,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω
2409290933_GL-GL40P04A4_C2892079.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
