Power MOSFET GL GL40N10A4 N Channel Type Featuring Low RDS ON Resistance and High Avalanche Capability
Key Attributes
Model Number:
GL40N10A4
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
221pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
3.4nF@25V
Gate Charge(Qg):
94nC@10V
Mfr. Part #:
GL40N10A4
Package:
TO-252
Product Description
Product Overview
The GL40N10A4 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers an ultra-low RDS(ON) and is fully characterized for avalanche voltage and current. Its TO-252 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N-Channel
- Package Type: TO-252
- Compliance: RoHS
Technical Specifications
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||||
| Drain-to-Source Voltage (VDSS) | 100 | V | ||||
| Continuous Drain Current (ID) | 40 | A | ||||
| Pulsed Drain Current (IDM) | 160 | A | ||||
| Gate-to-Source Voltage (VGS) | 20 | V | ||||
| Power Dissipation (PD) | 140 | W | ||||
| Derating factor | 0.89 | W/ | ||||
| Single pulse avalanche energy (EAS)a5 | 520 | mJ | ||||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 175 | 175 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 100 | V | |||
| Drain to Source Leakage Current (IDSS) | VDS=100V, VGS= 0V,Ta=25 | A | 1.0 | |||
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | A | 0.1 | |||
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | A | -0.1 | |||
| ON Characteristicsa3 | ||||||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=28A | m | 14 | 17 | ||
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250A | V | 0.9 | 1.1 | 1.5 | |
| Dynamic Characteristicsa4 | ||||||
| Forward Transconductance (gfs) | VDS=25V,ID=28A | 32 | S | |||
| Input Capacitance (Ciss) | VGS=0V,VDS=25V f=1.0MHz | pF | 3400 | |||
| Output Capacitance (Coss) | pF | 290 | ||||
| Reverse Transfer Capacitance (Crss) | pF | 221 | ||||
| Resistive Switching Characteristicsa4 | ||||||
| Turn-on Delay Time (td(ON)) | VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 | ns | 15 | |||
| Rise Time (tr) | ns | 11 | ||||
| Turn-Off Delay Time (td(OFF)) | ns | 52 | ||||
| Fall Time (tf) | ns | 13 | ||||
| Total Gate Charge (Qg) | VDD=30V, ID=30A VGS=10V | nC | 94 | |||
| Gate to Source Charge (Qgs) | nC | 16 | ||||
| Gate to Drain (Miller)Charge (Qgd) | nC | 24 | ||||
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (IS)a2 | (Body Diode) | A | 40 | |||
| Diode Forward Voltage (VSD)a3 | IS=28A,VGS=0V | V | 1.2 | |||
| Thermal Characteristics | ||||||
| Junction-to-Case (RJC)a2 | /W | 1.12 | ||||
a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t10sec.
a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
a4: Guaranteed by design, not subject to production.
a5: EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25.
2409290933_GL-GL40N10A4_C2886415.pdf
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